Initial Process of Si Homoepitaxial Growth on Si(001)

1996 ◽  
Vol 76 (16) ◽  
pp. 2949-2952 ◽  
Author(s):  
Takahiro Yamasaki ◽  
Tsuyoshi Uda ◽  
Kiyoyuki Terakura
Keyword(s):  
Homoepitaxial Growth ◽  
Initial Process

New tetramer structures in the initial process of Si homoepitaxial growth on Si (001)

2009 ◽  
Vol 256 (3) ◽  
pp. 744-748
Author(s):  
Changqing Wang ◽  
Yongsheng Zhang ◽  
Yu Jia
Keyword(s):  
Homoepitaxial Growth ◽  
Initial Process

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DP04 ◽  
Author(s):  
Keiko Masumoto ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Sign in / Sign up

Export Citation Format

Share Document