Single-Electron Charging in Double and Triple Quantum Dots with Tunable Coupling

1995 ◽  
Vol 75 (4) ◽  
pp. 705-708 ◽  
Author(s):  
F. R. Waugh ◽  
M. J. Berry ◽  
D. J. Mar ◽  
R. M. Westervelt ◽  
K. L. Campman ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Electron ◽  
Triple Quantum Dots ◽  
Tunable Coupling

scholarly journals Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

2020 ◽  
Vol 2 (2) ◽  
pp. 56
Author(s):  
Stephanus Hanurjaya ◽  
Miftahul Anwar ◽  
Meiyanto Eko Sulistyo ◽  
Irwan Iftadi ◽  
Subuh Pramono
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Single Electron Tunneling ◽  
Triple Quantum Dots ◽  
Working Principle ◽  
Electron Transistors

<p class="Abstract">Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.</p>

Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping

2016 ◽  
Vol 120 (23) ◽  
pp. 234502 ◽  
Author(s):  
Takafumi Uchida ◽  
Mingyu Jo ◽  
Atsushi Tsurumaki-Fukuchi ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gate Voltage ◽  
Triple Quantum Dots

scholarly journals Tunneling through triple quantum dots with mirror symmetry

2006 ◽  
Vol 73 (23) ◽  
Author(s):  
T. Kuzmenko ◽  
K. Kikoin ◽  
Y. Avishai
Keyword(s):  
Quantum Dots ◽  
Mirror Symmetry ◽  
Triple Quantum Dots

scholarly journals Impact of Hydrogen Adsorption on the Performance of a Single Electron Transistor Utilizing Fullerene Quantum Dots

2018 ◽  
Vol 7 (11) ◽  
pp. M191-M194 ◽  
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi ◽  
Razali Ismail ◽  
Hadi Heidari
Keyword(s):  
Quantum Dots ◽  
Hydrogen Adsorption ◽  
Single Electron ◽  
Single Electron Transistor

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

scholarly journals Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer

2007 ◽  
Vol 90 (15) ◽  
pp. 153104 ◽  
Author(s):  
Yoshiaki Nakamura ◽  
Masakazu Ichikawa ◽  
Kentaro Watanabe ◽  
Yasuhiro Hatsugai
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Quantum Fluctuation ◽  
Tunneling Current ◽  
Single Electron ◽  
Single Electron Transfer ◽  
Ge Quantum Dots
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