Comment on ‘‘Classical-to-quantum crossover in charge-density wave creep at low temperatures’’

1994 ◽  
Vol 72 (4) ◽  
pp. 586-586 ◽  
Author(s):  
Ji-Min Duan
Keyword(s):  
Charge Density ◽  
Low Temperatures ◽  
Charge Density Wave ◽  
Density Wave

Reversible and remanent charge-density-wave polarization at low temperatures

1988 ◽  
Vol 38 (17) ◽  
pp. 12740-12743 ◽  
Author(s):  
G. Mihály ◽  
T. Chen ◽  
G. Grüner
Keyword(s):  
Charge Density ◽  
Low Temperatures ◽  
Charge Density Wave ◽  
Density Wave ◽  
Wave Polarization

A model of coherent creep and switching in charge density wave conduction in NbSe3 at low temperatures

2002 ◽  
Vol 12 (9) ◽  
pp. 161-164
Author(s):  
J. C. Gill
Keyword(s):  
Charge Density ◽  
Dislocation Loop ◽  
Low Temperatures ◽  
Charge Density Wave ◽  
Density Wave ◽  
Threshold Field ◽  
Niobium Triselenide ◽  
Conducting State ◽  
Thermally Activated

A model is proposed of the temporally ordered collective creep with finite threshold field, and of the “switching" transition to a hgNy conducting state at a higher threshold, observed in charge-density wave conduction in niobium triselenide by Lemay et al. [phys. Rev. Lett. 83,2793 (1999)]. The model is based on their suggestion that the creep involves the thermally activated advance of wavelengths of CDW past individual impurities. In the model this is achieved by the formation near the impurity of a dislocation loop, which collapses after encircling it. Switching is attributed to a transition, induced by stress associated with the motion, to a situation in which collapse is avoided, enabling the CDW to advance indefinitely. The model accounts quantitatively for the observed creep, and exhibits switching and hysteresis qualitatively similar to that observed.

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