Distribution of local densities of states, order parameter function, and critical behavior near the Anderson transition

1994 ◽  
Vol 72 (4) ◽  
pp. 526-529 ◽  
Author(s):  
Alexander D. Mirlin ◽  
Yan V. Fyodorov
Keyword(s):  
Critical Behavior ◽  
Order Parameter ◽  
Anderson Transition ◽  
Densities Of States ◽  
Local Densities ◽  
Parameter Function

Commentary on local densities of states, surface bonds and rate processes

1986 ◽  
Vol 318 (1541) ◽  
pp. 135-139 ◽  
Keyword(s):  
Electron Spectroscopy ◽  
Main Part ◽  
Catalytic Reactions ◽  
Solid Surfaces ◽  
Densities Of States ◽  
Rate Processes ◽  
Local Densities ◽  
Structure And Bonding ◽  
The Many

Although the main part of the title of this meeting is ‘ Studies of the surfaces of solids by electron spectroscopy’, the papers presented also cover some of the wider aspects of these studies, and I wish to pursue some of these here. I remark first that most of the systems studied by surface-sensitive spectroscopies are not technologically important, or even interesting in their own right. What makes them important and interesting is that the solids studied are, or are related to, catalysts, and the adsorbates studied are reactants, products or intermediates in important catalytic reactions. Consequently I ask the question: what is the relevance to catalysis of studies of structure, and bonding at solid surfaces? From among the many answers that might be given, I select two.

Electronic Structure of Epitaxial SiO2/Si(100) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
T. Motooka
Keyword(s):  
Tight Binding ◽  
Interface States ◽  
Photoelectron Spectra ◽  
Band Spectrum ◽  
Binding Model ◽  
Initial Oxidation ◽  
Recursion Method ◽  
Densities Of States ◽  
Local Densities ◽  
Gap States

ABSTRACTThe local densities of states (LDOS) of epitaxial SiO, layers on Si(100) surfaces have been calculated using the recursion method combined with the Harrison's universal tight-binding model. The interface states associated with strained epitaxial layers of β-cristobalite (√2×√2)R45° and tridymite (1010)<0001> || Si(100)<011> were examined. In the β-cristobalite layer, gap states due to the surface Si dangling bonds appeared while they were eliminated by H termination. In the tridymite layer, the interface states primarily composed of the surface Si back bonds appeared near the Si conduction band minimum. Comparing the calculated DOS with photoelectron spectra for initial oxidation processes of clean Si(100), it was found that the valence band spectrum from the initial oxide formed at ∼300°C resembled that of the β-cristobalite layer.

The influence of hydrogen saturation on the local densities of states in small Si, Ge and GaAs clusters

1981 ◽  
Vol 106 (1-3) ◽  
pp. A188
Author(s):  
G. de Meyer ◽  
R. Hoogewijs ◽  
W. Lambrecht ◽  
J. Vennik ◽  
G. Dalmai
Keyword(s):  
Hydrogen Saturation ◽  
Densities Of States ◽  
Local Densities

scholarly journals Critical behavior of ac conductivity near the Anderson transition

1999 ◽  
Vol 60 (20) ◽  
pp. 14066-14071 ◽  
Author(s):  
Hiroyuki Shima ◽  
Tsuneyoshi Nakayama
Keyword(s):  
Critical Behavior ◽  
Ac Conductivity ◽  
Anderson Transition

Critical behavior of order-parameter fluctuations in liquidHe4nearTλ

1979 ◽  
Vol 20 (3) ◽  
pp. 1025-1034 ◽  
Author(s):  
B. Lambert ◽  
R. Perzynski ◽  
D. Salin
Keyword(s):  
Critical Behavior ◽  
Order Parameter
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