Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductors

1993 ◽  
Vol 71 (16) ◽  
pp. 2634-2637 ◽  
Author(s):  
H. Stupp ◽  
M. Hornung ◽  
M. Lakner ◽  
O. Madel ◽  
H. v. Löhneysen
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Heavily Doped

Electron transport in heavily doped amorphous SnO2 near metal–insulator transition

2001 ◽  
Vol 302-303 ◽  
pp. 374-376 ◽  
Author(s):  
B.N Mukashev ◽  
S.M Kikkarin ◽  
A.M Mukhitdinov ◽  
M.F Tamendarov
Keyword(s):  
Electron Transport ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Heavily Doped

scholarly journals On the Problem of Metal-Insulator Transitions in Vanadium Oxides

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
A. L. Pergament ◽  
G. B. Stefanovich ◽  
N. A. Kuldin ◽  
A. A. Velichko
Keyword(s):  
Vanadium Oxides ◽  
Insulator Transition ◽  
Temperature Transition ◽  
Metal Insulator Transition ◽  
Doped Semiconductors ◽  
Metal Insulator ◽  
Metal Compounds ◽  
Vanadium Sesquioxide ◽  
Paramagnetic Metal ◽  
Heavily Doped

The problem of metal-insulator transition is considered. It is shown that the Mott criterion aB(nc)1/3≈0.25 is applicable not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as vanadium oxides (particularly, VO2 and V2O3). The low-temperature transition (“paramagnetic metal—antiferromagnetic insulator”) in vanadium sesquioxide is described on the basis of this concept in terms of an intervening phase, between metal and insulator states, with divergent dielectric constant and effective charge carrier mass. Recent communications concerning a possible “metal-insulator transition” in vanadium pentoxide are also discussed.

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