Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence

1993 ◽  
Vol 71 (12) ◽  
pp. 1860-1863 ◽  
Author(s):  
B. G. Svensson ◽  
C. Jagadish ◽  
J. S. Williams
Keyword(s):  
Temperature Dependence ◽  
Dose Rate ◽  
Point Defects ◽  
Heavy Ions ◽  
Crystalline Silicon

ON THE TEMPERATURE DEPENDENCE OF PINNING BY IRRADIATION-INDUCED POINT DEFECTS IN COPPER

1971 ◽  
Vol 32 (C2) ◽  
pp. C2-151-C2-152
Author(s):  
P. WINTERHAGER ◽  
G. ROTH ◽  
R. JOHN ◽  
K. LÜCKE
Keyword(s):  
Temperature Dependence ◽  
Point Defects

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

Dose-rate dependence in the production of point defects in quartz

1993 ◽  
Vol 44 (1-2) ◽  
pp. IN11-277 ◽  
Author(s):  
L.E. Halliburton ◽  
A. Hofstaetter ◽  
A. Scharmann ◽  
M.P. Scripsick ◽  
G.J. Edwards
Keyword(s):  
Dose Rate ◽  
Point Defects ◽  
Rate Dependence

scholarly journals Tight-Binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
M. tang ◽  
L. colombo ◽  
T. Diaz De La Rubia
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Point Defects ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Diffusion Path ◽  
Binding Energies ◽  
Defect Clusters ◽  
Dynamics Simulations

AbstractTight-binding molecular dynamics (TBMD) simulations are performed (i) to evaluate the formation and binding energies of point defects and defect clusters, (ii) to compute the diffusivity of self-interstitial and vacancy in crystalline silicon, and (iii) to characterize the diffusion path and mechanism at the atomistic level. In addition, the interaction between individual defects and their clustering is investigated.

scholarly journals A Study of a-Sic/C-Si(n) Isotype Heterojunctions

1993 ◽  
Vol 16 (1) ◽  
pp. 55-64 ◽  
Author(s):  
N. Georgoulas ◽  
L. Magafas ◽  
A. Thanailakis
Keyword(s):  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Diffusion Mechanism ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Emission Mechanism ◽  
Drift Diffusion ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage

In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X1= 4.20 ± 0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared

Interaction of Point Defects in Ice

1978 ◽  
Vol 21 (85) ◽  
pp. 115-122
Author(s):  
J. H. Bilgram ◽  
H. Gränicher
Keyword(s):  
Experimental Data ◽  
Dielectric Properties ◽  
Temperature Dependence ◽  
Point Defects ◽  
Low Frequency ◽  
Defect Concentration ◽  
Dielectric Measurements ◽  
Long Time ◽  
Nmr Techniques ◽  
Bjerrum Defect

AbstractThe interaction of point detects in ice has been neglected for a long time. Experimental data obtained from dielectric measurements on HF-doped crystals stimulated a new evaluation of the possibility of an interaction between Bjerrum defects and ions. In a previous paper it has been shown that this leads us to assume the existence of aggregates of Bjerrum defects and ions. In this paper these aggregates and Bjerrum defects are used to explain the dielectric properties of ice, especially the temperature dependence of the product of the high and low frequency conductivity σ0σ∞.The interaction of Bjerrum defects and impurity molecules leads to a dependence of the concentration of frenkel pairs on Bjerrum-defect concentration. At HF concentrations above the native Bjerrum-defect concentration the formation of a Frenkel pair is enhanced. This leads to the fast out-diffusion which has been studied in highly doped crystals by means of NMR techniques.

Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

1997 ◽  
Vol 153-155 ◽  
pp. 137-158 ◽  
Author(s):  
Emanuele Rimini ◽  
Salvatore Coffa ◽  
Sebania Libertino ◽  
G. Mannino ◽  
F. Priolo ◽  
...  
Keyword(s):  
Point Defects ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Basic Research ◽  
And Migration
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