Conductance-noise power fluctuations in hydrogenated amorphous silicon

1992 ◽  
Vol 69 (7) ◽  
pp. 1097-1100 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Noise Power ◽  
Power Fluctuations ◽  
Hydrogenated Amorphous

Light Induced Changes in the Non-Gaussian Noise Statistics in Doped Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Gaussian Noise ◽  
Hydrogenated Amorphous Silicon ◽  
Noise Power ◽  
Defect Creation ◽  
Non Gaussian ◽  
Noise Statistics ◽  
Induced Changes ◽  
Many Body Interactions ◽  
Hydrogenated Amorphous

The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.

1 / F Noise Measurements of Interacting Current Filaments in Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
C.E. Parman ◽  
N.E. Israeloff ◽  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Power Spectra ◽  
Noise Power ◽  
Switching Noise ◽  
Scale Invariant ◽  
Noise Sources ◽  
Noise Measurements ◽  
Current Filaments ◽  
Hydrogenated Amorphous

The coplanar current in n-lype doped hydrogenated amorphous silicon (a-Si:H) displays random telegraph switching noise, indicating the presence of inhomogeneous current filaments whose conductance varies with time. There are strong correlations of the 1/f noise power spectra across differing frequency octaves which are much larger than expected if the magnitudes of the fluctuators are varied in parallel. The scale invariant second spectra and the temperature dependence of the spectral slope indicate that hydrogen motion is involved in the cooperative dynamics between noise sources. A model is described wherein the properties of the current filaments are modulated by hydrogen-hydrogen interactions which are mediated by the Si strain fields.

Non-Gaussian 1 / f Noise and Conductance Fluctuations in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Spectral Analysis ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Fluctuations ◽  
Noise Power ◽  
Effective Volume ◽  
Conductance Fluctuations ◽  
Cooperative Dynamics ◽  
Non Gaussian ◽  
Hydrogenated Amorphous

ABSTRACTStatistical analysis of the 1/f noise power spectrum of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the noise arises from a small number of correlated fluctuators. The noise power displays a complicated time dependence with the noise power changing in both magnitude and as a function of frequency. Spectral analysis of these noise power fluctuations display an approximate 1/f frequency dependence. These results are surprising given the effective volume (∼10-7 cm3) of the sample, and indicate that cooperative dynamics govern conductance fluctuations in a-Si:H.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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