Multiple low-temperature interface reactions: An alternative route into the amorphous state of metallic alloys

1991 ◽  
Vol 67 (27) ◽  
pp. 3792-3795 ◽  
Author(s):  
M. Seyffert ◽  
A. Siber ◽  
P. Ziemann
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Metallic Alloys ◽  
Alternative Route ◽  
Interface Reactions

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

2018 ◽  
Vol 11 (01) ◽  
pp. 1850011
Author(s):  
Lipeng Ren ◽  
Wei Wang ◽  
Chenglei Yu ◽  
Saisai Duan ◽  
Wenjing Ma ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Electron Beam ◽  
Low Temperature ◽  
Surface Morphology ◽  
Silicon Substrate ◽  
Amorphous State ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Bilayer Structure

In this work, Ni films with the thickness of 50[Formula: see text]nm were deposited on (110) silicon substrate by electron beam evaporation at the temperature of 125[Formula: see text]C, 300[Formula: see text]C and 500[Formula: see text]C. Graphene was prepared on Ni films by PECVD to study the effect of Ni film structure and surface morphology on the graphene grown by PECVD. The result shows that the particle size and surface roughness of Ni film increase, as the temperature of substrate go up. The Ni film deposited at 125[Formula: see text]C exhibits amorphous state, and the Ni films deposited at 300[Formula: see text]C and 500[Formula: see text]C exhibit (111) microcrystal structure. The graphene grown on the microcrystalline Ni film deposited at 300[Formula: see text]C is the bilayer structure with less defects and uniform morphology. The graphene prepared on the microcrystalline Ni film deposited at 500[Formula: see text]C has more defects, layers and obvious plane undulation. The analysis indicates that microcrystalline Ni film deposited at 300[Formula: see text]C can be used by PECVD at low temperature to prepare a bilayer graphene with less defects and uniform morphology.

Low-temperature irreversible structural relaxation of amorphous metallic alloys

2000 ◽  
Vol 215-216 ◽  
pp. 297-299 ◽  
Author(s):  
S.G Zaichenko ◽  
N.S Perov ◽  
A.M Glezer ◽  
E.A Gan'shina ◽  
V.M Kachalov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Structural Relaxation ◽  
Metallic Alloys ◽  
Amorphous Metallic Alloys

Reduction of Interface Reactions in the Low-Temperature Solid-Phase Epitaxy of ScAlMgO4 on Al2O3(0001)

2020 ◽  
Vol 20 (9) ◽  
pp. 6001-6007
Author(s):  
Yajin Chen ◽  
Peng Zuo ◽  
Yingxin Guan ◽  
M. Humed Yusuf ◽  
Susan E. Babcock ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Interface Reactions

Low Temperature Plasticity of Amorphous Metallic Alloys

1993 ◽  
Vol 35-36 ◽  
pp. 569-574
Author(s):  
Elena D. Tabachnikova ◽  
Pavel Diko ◽  
Václav Ocelík ◽  
P. Duhaj
Keyword(s):  
Low Temperature ◽  
Metallic Alloys ◽  
Amorphous Metallic Alloys

Crystallized Rubber

1932 ◽  
Vol 5 (3) ◽  
pp. 245-248
Author(s):  
R. Pummerer ◽  
G. von Susich
Keyword(s):  
Low Temperature ◽  
Specific Gravity ◽  
Amorphous State ◽  
Heat Content ◽  
X Rays ◽  
Discontinuous Change ◽  
Spontaneous Crystallization ◽  
X Ray ◽  
Degree Of Orientation ◽  
Crystallization From Solution

Abstract In recent years various attempts have been made to crystallize natural rubber by some means other than by stretching. In the present paper the results of these experiments are described, together with some new observations, in order to settle the present status of the problem. The processes of crystallization are divided into three groups and discussed individually. 1. Spontaneous crystallization under conditions which vary but little from the normal conditions. 2. Crystallization from solution after purification. 3. Crystallization of a solution of purified rubber by cooling to a low temperature. It is a generally known fact that after storage for a year, plantation rubber becomes stiff, inelastic, and opaque. A rubber altered in this way is known as “frozen” rubber, because this change has been observed most frequently after storage in a cold place. The x-ray investigations of Katz and Bing have rendered it certain that during “freezing” there is crystallization of the rubber, because when subjected to x-rays frozen rubber shows crystalline interferences from which the same crystal lattice is calculated as that which is formed on stretching, except that the degree of orientation in frozen rubber differs from that of stretched rubber. This is seen in x-ray diagrams, where the nearly point interferences of the stretched samples lie on the same Debye-Scherrer circles as those of frozen rubber. There have been rather exhaustive investigations on those changes in frozen rubber which appear on warming, viz., during transformation of the crystalline to the amorphous state (the “fusion process”), and which are characterized by disappearance of the crystal interferences and by a discontinuous change in the heat content, specific gravity, hardness, and light absorption.

Polymergebundenes Sulfonylazid zur entformylierenden Diazogruppen-Übertragung und zur Diazo -cyclopolyen -Synthese / Polymer Anchored Sulfonylazide for Deformylating Diazo Group Transfer and the Synthesis of Diazo-cyclopolyenes

1981 ◽  
Vol 36 (9) ◽  
pp. 1149-1152 ◽  
Author(s):  
Heinz Dürr ◽  
Gerhard Hauck ◽  
Wolfgang Brück ◽  
Helge Kober
Keyword(s):  
Low Temperature ◽  
Transfer Reaction ◽  
Diazo Compound ◽  
Alternative Route ◽  
Secondary Product ◽  
Group Transfer ◽  
Sulfonyl Azide ◽  
Polymer Anchored ◽  
Cyclic Polyenes ◽  
Diazo Group

AbstractPolymer anchored sulfonylazide is compared with its efficiency in the diazogroup transfer reaction of tosylazide. The resulting yields with the polymeric reaction are slightly lower than with tosylazide. However the greater thermostability of polymeric sulfonyl azide and its workup procedure make this alternative very attractive for synthesis. The reaction of polymeric sulfonyl azide with cyclic polyenes gives very small yields compared with the monomeric reaction. The attempt to generate diazocyclononatetraene by an alternative route leads only to the secondary product namely indene. At low temperature, and intermediate diazo-compound is, however, observed, which is tentatively assigned to structure 12.

Low-temperature interface reactions in layered Au/Sb films:In situinvestigation of the formation of an amorphous phase

1995 ◽  
Vol 51 (3) ◽  
pp. 1791-1802 ◽  
Author(s):  
H.-G. Boyen ◽  
A. Cossy-Favre ◽  
P. Oelhafen ◽  
A. Siber ◽  
P. Ziemann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Phase ◽  
Interface Reactions
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