Charge-state-dependent hydrogen-carbon-related deep donor in crystalline silicon

1989 ◽  
Vol 63 (1) ◽  
pp. 70-73 ◽  
Author(s):  
A. Endros
Keyword(s):  
Charge State ◽  
Crystalline Silicon ◽  
State Dependent ◽  
Deep Donor

Charge-state-dependent atomic geometries for isolated metal adatoms on GaAs(110)

1989 ◽  
Vol 40 (8) ◽  
pp. 5810-5813 ◽  
Author(s):  
John E. Klepeis ◽  
Walter A. Harrison
Keyword(s):  
Charge State ◽  
State Dependent

Charge State Dependent Energy Loss of Slow Heavy Ions in Solids

1997 ◽  
Vol 79 (11) ◽  
pp. 2030-2033 ◽  
Author(s):  
T. Schenkel ◽  
M. A. Briere ◽  
A. V. Barnes ◽  
A. V. Hamza ◽  
K. Bethge ◽  
...  
Keyword(s):  
Energy Loss ◽  
Charge State ◽  
Heavy Ions ◽  
State Dependent

scholarly journals Charge-state-dependent energy loss of slow ions. I. Experimental results on the transmission of highly charged ions

2016 ◽  
Vol 93 (5) ◽  
Author(s):  
Richard A. Wilhelm ◽  
Elisabeth Gruber ◽  
Valerie Smejkal ◽  
Stefan Facsko ◽  
Friedrich Aumayr
Keyword(s):  
Energy Loss ◽  
Charge State ◽  
Highly Charged Ions ◽  
Experimental Results ◽  
State Dependent ◽  
Slow Ions ◽  
Charged Ions

Diffusion of Fluorine-Silicon Interstitial Complex in Crystalline Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Scott A. Harrison ◽  
Thomas F. Edgar ◽  
Gyeong S. Hwang
Keyword(s):  
Density Functional Theory ◽  
Binding Energy ◽  
Charge State ◽  
First Principles ◽  
Density Functional ◽  
Positive Charge ◽  
Crystalline Silicon ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
And Diffusion

AbstractBased on first principles density functional theory calculations, we identify the structure and diffusion pathway for a fluorine-silicon interstitial complex (F-Sii). We find the F-Sii complex to be most stable in the singly positive charge state at all Fermi leVels. At mid-gap, the complex is found to have a binding energy of 1.08 eV relative to bond-centered F+ and (110)-split Sii. We find the F-Sii complex has an overall migration barrier of 0.76 eV, which suggests that this complex may play an important role in fluorine diffusion. Our results should lead to more accurate models that describe the behavior of fluorine co-implants crystalline silicon.

Charge state dependent energy loss of high velocity carbon ions in the charge state non-equilibrium region

1992 ◽  
Vol 167 (5-6) ◽  
pp. 487-492 ◽  
Author(s):  
H. Ogawa ◽  
I. Katayama ◽  
I. Sugai ◽  
Y. Haruyama ◽  
M. Tosaki ◽  
...  
Keyword(s):  
Energy Loss ◽  
Charge State ◽  
High Velocity ◽  
Carbon Ions ◽  
State Dependent ◽  
Equilibrium Region ◽  
Non Equilibrium
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