Interface-Limited Grain-Boundary Motion during Ion Bombardment

1988 ◽  
Vol 60 (2) ◽  
pp. 112-115 ◽  
Author(s):  
Harry A. Atwater ◽  
Carl V. Thompson ◽  
Henry I. Smith
Keyword(s):  
Grain Boundary ◽  
Ion Bombardment ◽  
Boundary Motion ◽  
Grain Boundary Motion

Transition State Model for Grain Boundary Motion During Ion Bombardment

1988 ◽  
Vol 100 ◽  
Author(s):  
Harry A. Atwater ◽  
Carl V. Thompsonm ◽  
Henry I. Smith
Keyword(s):  
Grain Boundary ◽  
Transition State ◽  
Boundary Migration ◽  
Ion Bombardment ◽  
State Model ◽  
Boundary Motion ◽  
Frenkel Defect ◽  
Thermally Induced ◽  
Two Phases ◽  
Grain Boundary Motion

ABSTRACTIon bombardment of polycrystalline Ge, Si, and Au films leads to rates of grain boundary motion that greatly exceed rates of thermally-induced motion at the same temperature and which exhibit a weak temperature dependence. The enhanced migration rate is proportional to the rate of energy deposition in nuclear collisions at or very near the grain boundary. Experimental work is reviewed, and a transition state model is presented which accounts for the observed kinetics of grain boundary migration during bombardment. This model suggests that the rate limiting step in grain boundary motion may be thermally-induced migration of a bombardment-generated defect across the boundary. Also, the ratio of atomic jumps at grain boundaries to the local collision-induced Frenkel defect generation rate is shown to be characteristic of each material, but independent of ion mass and ion flux. The model is extended to the motion of an interface between two phases, and applications to crystallization during ion bombardment are discussed.

Coupled grain boundary motion in a nanocrystalline grain boundary network

2011 ◽  
Vol 65 (2) ◽  
pp. 151-154 ◽  
Author(s):  
M. Velasco ◽  
H. Van Swygenhoven ◽  
C. Brandl
Keyword(s):  
Grain Boundary ◽  
Boundary Motion ◽  
Grain Boundary Motion

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

Grain boundary motion in particulate material

2020 ◽  
pp. 541-544
Author(s):  
J.L. Turner ◽  
M. Nakagawa ◽  
M.T. Lusk
Keyword(s):  
Grain Boundary ◽  
Particulate Material ◽  
Boundary Motion ◽  
Grain Boundary Motion

Grain Boundary Migration and Compensation Effect

2007 ◽  
Vol 550 ◽  
pp. 387-392
Author(s):  
Pavel Lejček
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Compensation Effect ◽  
Activation Enthalpy ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Boundary Motion ◽  
Exponential Factor ◽  
Grain Boundary Motion

Anisotropy of grain boundary motion in a Fe–6at.%Si alloy is represented by a spectrum of values of the activation enthalpy of migration and the pre-exponential factor, depending on the orientation of individual grain boundaries. The general plot of these values exhibits a pronounced linear interdependence called the compensation effect. It is shown that changes of these values, caused by changes of intensive variables, are thermodynamically consistent.

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