Determination of the Parity Change in Inelastic Scattering from the Angular Distribution

1961 ◽  
Vol 6 (2) ◽  
pp. 62-63 ◽  
Author(s):  
A. J. Kromminga ◽  
I. E. McCarthy
Keyword(s):  
Angular Distribution ◽  
Inelastic Scattering ◽  
Parity Change

Analysis of STEM micrographs of thick objects

1978 ◽  
Vol 36 (2) ◽  
pp. 106-107
Author(s):  
S. Golladay
Keyword(s):  
Inelastic Scattering ◽  
Multiple Scattering ◽  
Mass Distribution ◽  
Cross Sections ◽  
Phase Contrast ◽  
Image Point ◽  
Contrast Effects ◽  
Total Cross Sections ◽  
Elastic And Inelastic Scattering

The theory of multiple scattering has been worked out by Groves and comparisons have been made between predicted and observed signals for thick specimens observed in a STEM under conditions where phase contrast effects are unimportant. Independent measurements of the collection efficiencies of the two STEM detectors, calculations of the ratio σe/σi = R, where σe, σi are the total cross sections for elastic and inelastic scattering respectively, and a model of the unknown mass distribution are needed for these comparisons. In this paper an extension of this work will be described which allows the determination of the required efficiencies, R, and the unknown mass distribution from the data without additional measurements or models. Essential to the analysis is the fact that in a STEM two or more signal measurements can be made simultaneously at each image point.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Analysis of 12C(α, α′) using α condensate model wave function

2006 ◽  
Vol 21 (31n33) ◽  
pp. 2341-2346
Author(s):  
M. Takashina ◽  
Y. Sakuragi
Keyword(s):  
Wave Function ◽  
Angular Distribution ◽  
Excited State ◽  
Inelastic Scattering ◽  
Transition Density ◽  
Nuclear Radius ◽  
Oscillation Pattern ◽  
Model Wave Function ◽  
Model Wave

We analyze the inelastic scattering of the α+12 C system leading to the [Formula: see text] state in 12 C at incident energies of E α=139 MeV ~ 240 MeV using α condensate model wave function, and investigate the affection of the large nuclear radius of [Formula: see text] on the inelastic angular distribution. It is found that the oscillation pattern in inelastic angular distribution is sensitive to the extent of transition density rather than the nuclear radius of the excited state.

scholarly journals The inelastic scattering of slow electrons in gases.—IV

1933 ◽  
Vol 142 (847) ◽  
pp. 647-658 ◽  
Keyword(s):  
Angular Distribution ◽  
Inelastic Scattering ◽  
Incident Electron ◽  
Angular Distributions ◽  
Mercury Vapour ◽  
Preliminary Results ◽  
Excitation Potential ◽  
Discrete Amount ◽  
Slow Electrons ◽  
Diffraction Effects

Recent investigations have shown that the inelastic scattering of electrons in gases exhibits some very interesting phenomena. In previous papas we have described the angular distribution of the scattering of electrons which have lost a discrete amount of energy. Papers I and II described preliminary results which established the existence of diffraction effects at large angles in a number of gases. In Paper III the measurements were carried out over a range of velocities lower than those previously studied, results being obtained for incident electron energies down to within a few volts of the excitation potential. angular distributions were obtained for the inelastic scattering of electrons in hydrogen, helium, and argon between the angles 10° and 155°. The present paper describes the extension of the measurements to methane, nitrogen, neon and mercury vapour.

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