Chemically bonded diamondlike carbon films from ion-beam deposition

1987 ◽  
Vol 59 (1) ◽  
pp. 75-78 ◽  
Author(s):  
Srinandan Kasi ◽  
Heon Kang ◽  
J. Wayne Rabalais
Keyword(s):  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Diamondlike Carbon ◽  
Beam Deposition

Preparation of diamondlike carbon films by high‐intensity pulsed‐ion‐beam deposition

1994 ◽  
Vol 76 (10) ◽  
pp. 5949-5954 ◽  
Author(s):  
Gregory P. Johnston ◽  
Prabhat Tiwari ◽  
Donald J. Rej ◽  
Harold A. Davis ◽  
William J. Waganaar ◽  
...  
Keyword(s):  
High Intensity ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Diamondlike Carbon ◽  
Beam Deposition

Synthesis and Characterization of Nitrogen Containing Diamondlike Carbon Films made by ion Beam Deposition

1994 ◽  
Vol 349 ◽  
Author(s):  
Jeansong Shiao ◽  
Christian A. Zorman ◽  
Richard W. Hoffman
Keyword(s):  
Elevated Temperatures ◽  
Nitrogen Loss ◽  
Ion Beam ◽  
Carbon Films ◽  
Elastic Recoil ◽  
Heated Sample ◽  
Ion Beam Deposition ◽  
Detection Analysis ◽  
Diamondlike Carbon ◽  
Beam Deposition

ABSTRACTHydrogenated and nonhydrogenated nitrogen containing diamondlike carbon films (NDLC including a-C:N and a-C:N:H) were made in a dual ion beam deposition system. The asdeposited films were characterized by Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and elastic recoil detection analysis (ERD). The compositional stability of the films at temperatures up to 550°C was examined in situ by both RBS and ERD using a heated sample stage in the scattering chamber. The addition of nitrogen altered the Raman parameters when compared with conventional DLC. At elevated temperatures, the a-C:N films do not suffer nitrogen loss; however, the a-C:N:H films undergo nitrogen and hydrogen loss at 400°C.

The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films

1993 ◽  
Vol 2 (2-4) ◽  
pp. 285-290 ◽  
Author(s):  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
I. Avigal ◽  
C. Uzan-Saguy ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Influence Of Substrate ◽  
Beam Deposition

Growth of diamond and diamond-like films using a low energy ion beam

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Energy ◽  
Hydrogen Passivation ◽  
Heteroepitaxial Growth ◽  
Ion Beam Deposition ◽  
Additional Control ◽  
Strain Release ◽  
Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV

1991 ◽  
Vol 70 (10) ◽  
pp. 5623-5628 ◽  
Author(s):  
W. M. Lau ◽  
I. Bello ◽  
X. Feng ◽  
L. J. Huang ◽  
Qin Fuguang ◽  
...  
Keyword(s):  
Energy Range ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ion‐Beam Deposition of Thin Films of Diamondlike Carbon

1971 ◽  
Vol 42 (7) ◽  
pp. 2953-2958 ◽  
Author(s):  
Sol Aisenberg ◽  
Ronald Chabot
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Diamondlike Carbon ◽  
Beam Deposition

Ion Beam Deposition of Amorphous Carbon Films With Diamond Like Properties

1981 ◽  
Vol 7 ◽  
Author(s):  
John C. Angus ◽  
Michael J. Mirtich ◽  
Edwin G. Wintucky
Keyword(s):  
Amorphous Carbon ◽  
Growth Rates ◽  
Random Network ◽  
Ion Beam ◽  
Potassium Bromide ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTCarbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 μm/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

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