Concentration dependence and temperature dependence of hydrogen tunneling in Nb(OH)x

1986 ◽  
Vol 56 (2) ◽  
pp. 159-162 ◽  
Author(s):  
A. Magerl ◽  
A. J. Dianoux ◽  
H. Wipf ◽  
K. Neumaier ◽  
I. S. Anderson
Keyword(s):  
Temperature Dependence ◽  
Concentration Dependence ◽  
Hydrogen Tunneling

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Triplet Energy Migration in Poly(4-methacryloylbenzophenone-co-methyl methacrylate) Films:  Temperature Dependence and Chromophore Concentration Dependence

1996 ◽  
Vol 29 (5) ◽  
pp. 1589-1594 ◽  
Author(s):  
Akira Tsuchida ◽  
Masahide Yamamoto ◽  
William R. Liebe ◽  
Richard D. Burkhart ◽  
Kyoji Tsubakiyama
Keyword(s):  
Methyl Methacrylate ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Energy Migration ◽  
Triplet Energy ◽  
Chromophore Concentration

Structural and Magnetic Characteristics of (Eu1-xGax) Ba2Cu3O7-δ High-Tc Superconductors

1997 ◽  
Vol 11 (13) ◽  
pp. 593-597 ◽  
Author(s):  
Iuliu Pop ◽  
Radu Redac ◽  
Gheorghe Borodi ◽  
Virgil Ioncu
Keyword(s):  
Magnetic Susceptibility ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Tetragonal Structure ◽  
Magnetic Characteristics ◽  
High Tc Superconductors ◽  
High Tc ◽  
Gallium Concentration ◽  
Paramagnetic Region ◽  
Diamagnetic Transition

The high-T c ( Eu 1-x Ga x) Ba 2 Cu 3 O 7-δ superconductors with x=0, 0.01, 0.02, 0.03, 0.06 and 0.09 were synthesized by a ceramic technique. The gallium concentration dependence of the lattice parameters was determined. A transition from orthorhombic toward tetragonal structure was relevated for the most gallium concentrated sample. The temperature dependence of the magnetic susceptibility pointed out the diamagnetic transition at 78 and 80 K. In the paramagnetic region the magnetic susceptibility exhibits anomal temperature dependence.

Konzentrations-und Temperaturabhängigkeit der Sensibilisierten Verzögerten Fluoreszenz in Naphthalin/Anthracen-Mischkristallen / Sensitized Delayed Fluorescence in Naphthalene/Anthracene Mixed Crystals: Concentration and Temperature Dependence

1975 ◽  
Vol 30 (3) ◽  
pp. 277-286 ◽  
Author(s):  
H. Port ◽  
M. Bader ◽  
G. Weber ◽  
H. C. Wolf
Keyword(s):  
Energy Transfer ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Energy Transport ◽  
Delayed Fluorescence ◽  
Mixed Crystals ◽  
Temperature Range ◽  
Host Molecules ◽  
Hopping Model ◽  
Triplet Excitons

The delayed fluorescence of naphthalene crystals doped with anthracene has been investigated for concentrations between 7 × 10-9 and 10-5mol/mol in the temperature range 4.2 -300 °K. The concentration dependence of both the quantum ratio of host and guest emission and of the lifetime shows the effectivity of energy transfer by triplet excitons. It can be described quantitatively within the statistical hopping model, which includes the probability for an exciton to visit the same host molecules repetitively before becoming trapped. This incoherent energy transport becomes faster as the temperature is lowered. The exciton hopping time decreases monotonically from tʜ = 2 × 10-10 sec at 300 °K to tʜ = 8 × 10-11 sec at 130 °K. Below 100 °K the delayed fluorescence is governed by competing trapping effects.

Theory of temperature dependence of hydrogen tunneling reactions

2000 ◽  
Vol 322 (1-2) ◽  
pp. 78-82 ◽  
Author(s):  
Gennadii K. Ivanov ◽  
Mortko A. Kozhushner ◽  
Leonid I. Trakhtenberg
Keyword(s):  
Temperature Dependence ◽  
Hydrogen Tunneling

Water vapor concentration dependence and temperature dependence of Li mass loss from Li2TiO3 with excess Li and Li4SiO4

2015 ◽  
Vol 98-99 ◽  
pp. 1808-1811 ◽  
Author(s):  
Motoki Shimozori ◽  
Kazunari Katayama ◽  
Tsuyoshi Hoshino ◽  
Hiroki Ushida ◽  
Ryotaro Yamamoto ◽  
...  
Keyword(s):  
Water Vapor ◽  
Mass Loss ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Vapor Concentration ◽  
Water Vapor Concentration

Molar heat capacities and enthalpies of fusion for the system zinc chloride-dimethyl sulphoxide

1987 ◽  
Vol 52 (9) ◽  
pp. 2188-2193
Author(s):  
Mojmír Skokánek ◽  
Ivo Sláma
Keyword(s):  
Heat Capacity ◽  
Phase Transitions ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Zinc Chloride ◽  
Liquid State ◽  
Molar Heat Capacity ◽  
Heat Capacities ◽  
Dimethyl Sulphoxide ◽  
Molten State

Molar heat capacities and molar enthalpies of phase transitions in the system ZnCl2-DMSO have been investigated over the temperature range 240 to 405 K and the concentration range 11.1 to 40 mole % ZnCl2. The temperatures of fusion and of phase transitions were determined and compared with literature data. Equations were proposed for the description of the temperature dependence of the molar heat capacity in the liquid state. The concentration dependence of the molar heat capacity in the molten state was found to exhibit positive deviations from additivity.

Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model

2012 ◽  
Vol 717-720 ◽  
pp. 241-246 ◽  
Author(s):  
Koutarou Kawahara ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Experimental Data ◽  
Diffusion Equation ◽  
Time Dependence ◽  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Concentration Dependence ◽  
Analytical Model ◽  
Deep Level ◽  
Defect Reduction ◽  
Almost All

It has been clarified that Z1/2 center, a well known deep level as a lifetime killer, can be reduced to the concentration below 1011 cm-3 by thermal oxidation or C+ implantation plus Ar annealing. In this study, the authors investigate the trap-reduction phenomena systematically (experimentally), and propose a model to analyze the phenomena. Furthermore, prediction of the defect distributions is realized by solving a diffusion equation in accordance with the trap reduction model. This analytical model can explain almost all experimental data: oxidation-temperature dependence, oxidation-time dependence, and initial-Z1/2-concentration dependence of the defect reduction. Based on these results, the authors accomplish to eliminate the Z1/2 center to a depth of 100 μm in the sample with a relatively high initial-Z1/2-concentration of 1013 cm-3 by thermal oxidation at 1400°C for 16.5 h.

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