Image States: Binding Energies, Effective Masses, and Surface Corrugation

1985 ◽  
Vol 54 (6) ◽  
pp. 591-594 ◽  
Author(s):  
N. Garcia ◽  
B. Reihl ◽  
K. H. Frank ◽  
A. R. Williams
2007 ◽  
Vol 21 (16) ◽  
pp. 2735-2747 ◽  
Author(s):  
G. J. ZHAO ◽  
X. X. LIANG ◽  
S. L. BAN

The binding energies of excitons in finite barrier quantum wells under hydrostatic pressure are calculated by a variational method. The influences of hydrostatic pressure on the effective masses of the electron and hole, the dielectric constant, and the conduction band offset between the well and barriers are taken into account in the calculation. The numerical results for the GaAs/Al x Ga 1-x As and GaN/Al x Ga 1-x N quantum wells are given respectively. It is shown that the exciton binding energy increases linearly with the pressure and the pressure effect on arsenide quantum wells is more obvious than that on nitride ones. The exciton binding energies monotonically increase with increasing barrier height, which is related to the Al concentration of the barriers and the influence of the pressure.


2003 ◽  
Vol 17 (27n28) ◽  
pp. 1425-1435 ◽  
Author(s):  
Z. Z. GUO ◽  
X. X. LIANG ◽  
S. L. BAN

A variational method is used to study the ground-state binding energies of interface light-hole excitons in ZnTe/CdSe type-II heterojunctions under the influence of hydrostatic pressure. The finite triangle potential well approximation is introduced considering the band bending near the interface. The asymptotic transfer method is adopted to obtain the sub-band energies and wave functions of the electrons and light holes. The pressure influence on the band offsets, the effective masses and the dielectric constant are considered in the calculation. The obvious pressure-induced increase of the exciton binding energy is demonstrated and the influences of the pressure-depended parameters on the binding energy are compared.


2006 ◽  
Vol 20 (24) ◽  
pp. 1529-1541 ◽  
Author(s):  
S. RAJASHABALA ◽  
K. NAVANEETHAKRISHNAN

The donor ionization energies in a quantum well and quantum dot with finite and infinite barriers are estimated for different well dimensions. Using the effective mass (EM) approximation, calculations are presented with constant effective mass and position dependent effective masses that are different for finite and infinite cases. Our results reduce to an approximate form used by X. H. Qi et al., Phys. Rev. B58 (1998) 10578 in the finite barrier model and that of L. E. Oliveira and L. M. Falicov, Phys. Rev. B34 (1986) 8676 in the infinite barrier case. Results are presented by taking the GaAs quantum well as an example. The use of constant effective mass of 0.067m0 is justified for well dimensions ≥a* where a* is an effective Bohr radius which is about 100 Å. While Qi et al. found a maximum of 22% variation in the binding energies due to mass variation, we obtained nearly 100% variation when mass variations are included correctly.


1986 ◽  
Vol 178 (1-3) ◽  
pp. A648
Author(s):  
J. Bausells ◽  
P.M. Echenique ◽  
F. Flores

1987 ◽  
Vol 182 (3) ◽  
pp. 423-430 ◽  
Author(s):  
J. Bausells ◽  
P.M. Echenique

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