High-Resolution Proton NMR in Amorphous Si: H: Spectroscopic Direct Observation of Molecular Hydrogen and Reinterpretation of the Narrow Line

1984 ◽  
Vol 53 (6) ◽  
pp. 576-579 ◽  
Author(s):  
B. Lamotte
2000 ◽  
Vol 609 ◽  
Author(s):  
Sjoerd Roorda

ABSTRACTIn the early days of point defect studies in electron irradiated crystalline silicon, it was surmised that the Si self-interstitial is highly mobile even at 4 K and escapes direct detection. The existence of self-interstitials has of course been confirmed through the diffusion behaviour of a range of impurities and the direct observation of larger interstitial-type clusters. Against this background, the direct observation of self-interstitials in amorphous Si would seem next to impossible. Yet just such an observation may have been made recently, through a comparison of the high-resolution radial distribution function of pure amorphous Si before and after thermal anneal and that of crystalline Si.


1989 ◽  
Vol 264 (6) ◽  
pp. 3478-3483 ◽  
Author(s):  
S Ando ◽  
R K Yu ◽  
J N Scarsdale ◽  
S Kusunoki ◽  
J H Prestegard

1982 ◽  
Vol 76 (5) ◽  
pp. 2767-2768 ◽  
Author(s):  
Richard Eckman
Keyword(s):  

1993 ◽  
Vol 154 (1-2) ◽  
pp. 47-51 ◽  
Author(s):  
F. Nicoli ◽  
J. Vion-Dury ◽  
J.M. Maloteaux ◽  
C. Delwaide ◽  
S. Confort-Gouny ◽  
...  

1992 ◽  
Vol 190 (4) ◽  
pp. 557-562 ◽  
Author(s):  
M.R. Koblischka ◽  
Th. Schuster ◽  
B. Ludescher ◽  
H. Kronmüller

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