Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures

1984 ◽  
Vol 53 (19) ◽  
pp. 1841-1844 ◽  
Author(s):  
J. F. Ryan ◽  
R. A. Taylor ◽  
A. J. Turberfield ◽  
Angela Maciel ◽  
J. M. Worlock ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Hot Carriers ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Exciton dynamics and annihilation in WS2 2D semiconductors

Nanoscale ◽  
2015 ◽  
Vol 7 (16) ◽  
pp. 7402-7408 ◽  
Author(s):  
Long Yuan ◽  
Libai Huang
Keyword(s):  
Two Dimensional ◽  
Time Resolved ◽  
Exciton Dynamics ◽  
2D Semiconductors ◽  
Time Resolved Photoluminescence ◽  
2D Crystals

We systematically investigate the exciton dynamics in monolayered, bilayered, and trilayered WS2 two-dimensional (2D) crystals by time-resolved photoluminescence (TRPL) spectroscopy.

Determining In-Plane Carrier Diffusion in Two-Dimensional Perovskite Using Local Time-Resolved Photoluminescence

2020 ◽  
Vol 12 (23) ◽  
pp. 26384-26390
Author(s):  
Chunhua Zhou ◽  
Weijian Chen ◽  
Shuang Yang ◽  
Qingdong Ou ◽  
Zhixing Gan ◽  
...  
Keyword(s):  
Local Time ◽  
Two Dimensional ◽  
Time Resolved ◽  
Carrier Diffusion ◽  
Time Resolved Photoluminescence

Two-dimensional correlation analysis of the time-resolved photoluminescence spectra of gallium nitride nanowires

2008 ◽  
Vol 883-884 ◽  
pp. 209-215 ◽  
Author(s):  
Bonghwan Chon ◽  
Soo Ryeon Ryu ◽  
Young-Joon Hong ◽  
Jinkyoung Yoo ◽  
Gyu-Chul Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Correlation Analysis ◽  
Two Dimensional ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS

1986 ◽  
Vol 170 (1-2) ◽  
pp. 511-519 ◽  
Author(s):  
J.F. Ryan ◽  
R.A. Taylor ◽  
A.J. Turberfield ◽  
J.M. Worlock
Keyword(s):  
Two Dimensional ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of a two-dimensional hole system in the extreme quantum limit

1995 ◽  
Vol 51 (19) ◽  
pp. 13876-13879 ◽  
Author(s):  
L. V. Kulik ◽  
V. T. Dolgopolov ◽  
A. A. Shashkin ◽  
A. F. Dite ◽  
L. V. Butov ◽  
...  
Keyword(s):  
Quantum Limit ◽  
Two Dimensional ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence from hot two-dimensional carriers in GaAs-GaAlAs MQWS

1986 ◽  
Vol 170 (1-2) ◽  
pp. A248
Author(s):  
J.F. Ryan ◽  
R.A. Taylor ◽  
A.J. Turberfield ◽  
J.M. Worlock
Keyword(s):  
Two Dimensional ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Catalysts ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 737
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Wei-Chun Chen ◽  
Dan-Hua Hsieh ◽  
Woei-Tyng Lin ◽  
...  
Keyword(s):  
Activation Energy ◽  
Carrier Dynamics ◽  
Nitrogen Vacancy ◽  
Two Dimensional ◽  
Time Resolved ◽  
One Dimensional ◽  
Lifetime Analysis ◽  
Energy Dependent ◽  
Time Resolved Photoluminescence ◽  
Formation Energies

In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by the growth temperature, from one-dimensional (1D) nanorods to two-dimensional (2D) films. Moreover, donor-like nitrogen vacancy (VN) is responsible for the increase in carrier concentration due to the lowest formation energies in the n-type InN samples. The PL results also reveal that the energies of emission peaks are higher in the InN samples with 2D features than that with 1D features. These anomalous transitions are explained as the recombination of Mahan excitons and localized holes, and further proved by a theoretical model, activation energy and photon energy-dependent lifetime analysis.

Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence

2003 ◽  
Vol 798 ◽  
Author(s):  
Qing Yang ◽  
Rob Armitage ◽  
Eicke R. Weber ◽  
Ronald Birkhahn ◽  
David Gotthold ◽  
...  
Keyword(s):  
Electron Gas ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Time Resolved ◽  
Hall Effect Measurements ◽  
Dimensional Electron Gas ◽  
Time Resolved Photoluminescence

ABSTRACTNearbandgap radiative recombination in undoped AlxGa1-xN/GaN (x = 0.28 to 0.35) single heterostructures grown by metalorganic chemical vapor deposition is investigated using picosecond time-resolved photoluminescence at 11K.Room temperature Hall effect measurements show both high sheet carrier concentrations (∼1×1013 cm-2) and high mobilities (∼1000 cm2/Vs), suggesting the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The luminescence transient of the 3.481 eV emissions, which is usually assigned to donor-bound exciton emission of GaN, consists of an initial fast component and a slow second component. Samples with higher aluminum concentrations show broad luminescence peaks in the spectral range of 3.41—3.45 eV with long decay lifetimes over 1 ns. In addition, the below bandgap emissions saturate at high excitation power and shift toward lower energies with increasing time delay. The observed emissions are explained by the recombination processes involving the 2DEG at the heterointerface.

Sign in / Sign up

Export Citation Format

Share Document