Decay of the Zero-Voltage State in Small-Area, High-Current-Density Josephson Junctions

1981 ◽  
Vol 47 (9) ◽  
pp. 697-700 ◽  
Author(s):  
L. D. Jackel ◽  
J. P. Gordon ◽  
E. L. Hu ◽  
R. E. Howard ◽  
L. A. Fetter ◽  
...  
Keyword(s):  
Current Density ◽  
Josephson Junctions ◽  
Small Area ◽  
High Current Density ◽  
High Current ◽  
Zero Voltage

Small‐area high‐current‐density Josephson junctions

1979 ◽  
Vol 35 (11) ◽  
pp. 879-881 ◽  
Author(s):  
R. E. Howard ◽  
E. L. Hu ◽  
L. D. Jackel ◽  
L. A. Fetter ◽  
R. H. Bosworth
Keyword(s):  
Current Density ◽  
Josephson Junctions ◽  
Small Area ◽  
High Current Density ◽  
High Current

Small Area Planar Nb/Nb Josephson Tunnel Junction with High Current Density

1984 ◽  
Vol 23 (Part 2, No. 1) ◽  
pp. L43-L45
Author(s):  
Hideaki Takayanagi ◽  
Tsuyoshi Kawakami
Keyword(s):  
Current Density ◽  
Tunnel Junction ◽  
Small Area ◽  
High Current Density ◽  
High Current ◽  
Josephson Tunnel

Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes

2019 ◽  
Vol 963 ◽  
pp. 562-566
Author(s):  
Yi Dan Tang ◽  
Sheng Xu Dong ◽  
Yun Bai ◽  
Cheng Yue Yang ◽  
Cheng Zhan Li ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Density ◽  
Small Area ◽  
High Current Density ◽  
Schottky Diodes ◽  
High Current ◽  
Large Area ◽  
Reverse Blocking ◽  
Experimental Values ◽  
Surface Leakage

Mechanisms and characteristics of optimized main junction for 4H-SiC trench junction barrier Schottky (TMJBS) diodes were investigated by theories and experiments. From these simulation and experimental values, we can conclude that TMJBS device has better reverse performance, such as the best reverse blocking capability and lowest reverse surface leakage current than the conventional JBS and TJBS device while maintaining good forward characteristics. Furthermore, The large area TMJBS Diodes with high current density show the better reverse characteristics than the small area one at an acceptable forward characteristics. The TMJBS structure can significantly reduce the influence of the Schottky interface and is more suitable for manufacturing high current density and large area devices.

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