Periodic Oscillations of the Frequency-Dependent Photoelectric Cross Sections of Surface States: Theory and Experiment

1980 ◽  
Vol 44 (8) ◽  
pp. 549-553 ◽  
Author(s):  
Steven G. Louie ◽  
P. Thiry ◽  
R. Pinchaux ◽  
Y. Pétroff ◽  
D. Chandesris ◽  
...  
Keyword(s):  
Cross Sections ◽  
Surface States ◽  
Periodic Oscillations ◽  
Frequency Dependent ◽  
Theory And Experiment

PHOTOEMISSION CALCULATION WITH A SIMPLE MODEL FOR THE PHOTON FIELD: APPLICATION TO ALUMINIUM

1991 ◽  
Vol 05 (01) ◽  
pp. 65-72 ◽  
Author(s):  
P. DAS ◽  
R.K. THAPA ◽  
N. KAR
Keyword(s):  
Experimental Data ◽  
Simple Model ◽  
Fermi Level ◽  
Dielectric Function ◽  
Cross Sections ◽  
Free Electron ◽  
Surface Region ◽  
Field Application ◽  
Frequency Dependent ◽  
Photon Field

Photoemission cross-sections are calculated, using a simple “local” dielectric function for computing the photon field in the surface region and free electron wavefunctions. Comparisons are made with the experimental data for the frequency-dependent normal photoemission from the Fermi level of aluminium, and the importance of the variation of the photon field in the surface region is pointed out.

Particle–Nucleus Scattering at Intermediate Energies

1972 ◽  
Vol 50 (14) ◽  
pp. 1609-1613 ◽  
Author(s):  
Melvyn E. Best
Keyword(s):  
Cross Sections ◽  
Incident Neutron ◽  
Total Neutron ◽  
Intermediate Energies ◽  
Incident Pion ◽  
Glauber Theory ◽  
Nucleus Scattering ◽  
Theory And Experiment ◽  
Good Agreement

For incident neutron energies between 20 MeV and 10 GeV the total neutron–nucleus [Formula: see text] cross sections were calculated using Glauber theory. Remarkably good agreement between experiment and theory was found at energies above 250 MeV. Using the same formalism with identical nuclear parameters, the π−–C cross sections were calculated for incident pion energies near the (3, 3) resonance. In this case, however, good agreement between theory and experiment was found for pion energies above 150 MeV.

On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

2008 ◽  
Vol 85 (1) ◽  
pp. 81-88 ◽  
Author(s):  
F. Parlaktürk ◽  
Ş. Altındal ◽  
A. Tataroğlu ◽  
M. Parlak ◽  
A. Agasiev
Keyword(s):  
Series Resistance ◽  
Surface States ◽  
Frequency Dependent ◽  
Dependent Series

Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
M. Barbé ◽  
F. Bailly ◽  
J. Chevallier ◽  
S. Silvestre ◽  
D. Loridant-Bernard ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Cross Section ◽  
Cross Sections ◽  
Electronic Excitation ◽  
Surface States ◽  
Antibonding State ◽  
Free Carriers ◽  
Bonding State ◽  
Uv Illumination ◽  
Optical Cross Section

AbstractIn GaAs, (Si,H) complexes are efficiently dissociated at 300 K by photons with energies above 3.5 eV. Their optical cross-section is 10-19-10-18 cm2. This dissociation is the result of an electronic excitation of the Si-H bond of the complex from a bonding state to an antibonding state. (Si,H) and (S,H) complexes in AlGaAs alloys are also dissociated under UV illumination with optical cross-sections similar to GaAs. In passivated 2D AlGaAs-GaAs heterostructures, the evolution of the extra sheet carrier concentration at low photon densities presents a loss of free carriers attributed to the filling of surface states. In AlGaAs and in 2D AlGaAs-GaAs heterostructures, the replacement of hydrogen by deuterium in the complexes shows that the (Si,D) and (S,D) complexes are significantly more stable than the (Si,H) and (S,H) complexes as previously found in GaAs:Si,H.

On the interaction between the 5s-p and 4d-p channels in Sr I

1977 ◽  
Vol 353 (1674) ◽  
pp. 431-440 ◽  
Keyword(s):  
Experimental Data ◽  
Discrete Spectrum ◽  
Oscillator Strength ◽  
Cross Sections ◽  
Channel Model ◽  
Matrix Elements ◽  
Defect Model ◽  
Mixing Coefficients ◽  
Opening Up ◽  
Theory And Experiment

A two-channel quantum defect model is applied to analyse the strongly perturbed principal absorption series of Sr near threshold. Experimental data in the discrete and in the autoionization region are expressed in terms of five parameters: two eigenquantum defects μ α , one transformation angle θ , and two dipole matrix elements D α . Values of the parameters, obtained by fitting the experimental data, provide information on the mixing coefficients of the levels and oscillator strength as well as on photoabsorption cross sections in the autoionization region. The two-channel model is sufficient to describe the discrete spectrum. Discrepancies show up between theory and experiment in the autoionization region because of opening up of additional channels above the first ionization threshold.

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