New Model Hamiltonian for the Metal-Insulator Transition

1979 ◽  
Vol 43 (26) ◽  
pp. 1957-1960 ◽  
Author(s):  
C. Castellani ◽  
C. Di Castro ◽  
D. Feinberg ◽  
J. Ranninger
1997 ◽  
Vol 04 (02) ◽  
pp. 281-286 ◽  
Author(s):  
F. FLORES ◽  
A. LEVY YEYATI ◽  
J. ORTEGA

A model Hamiltonian, based on LDA calculations, is introduced for describing the behavior of the electrons filling the dangling bonds of the Si(111)-(7×7) surface. Our analysis of this model shows that this surface has a metallic character at room temperature and exhibits a metal–insulator transition for a temperature between 120 and 180 K. These properties are associated with the localization of electrons on some elementary structures having either a dimer or a hexagonal ring geometry.


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J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
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...  

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Ai Ikeda ◽  
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...  

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Teruo Kanki ◽  
Shun Shirai ◽  
Hidekazu Tanaka ◽  
Yoshio Teki ◽  
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