scholarly journals Electron Pair Production at High Energy in a Silicon Single Crystal

1960 ◽  
Vol 4 (3) ◽  
pp. 134-135 ◽  
Author(s):  
G. Bologna ◽  
G. Diambrini ◽  
G. P. Murtas
Keyword(s):  
Single Crystal ◽  
Pair Production ◽  
Electron Pair ◽  
High Energy ◽  
Silicon Single Crystal

Direct Electron Pair Production by High-Energy Muons

1974 ◽  
Vol 32 (25) ◽  
pp. 1460-1463 ◽  
Author(s):  
P. L. Jain ◽  
M. Kazuno ◽  
B. Girard
Keyword(s):  
Pair Production ◽  
Electron Pair ◽  
High Energy

External electron pair production in high-energy collisions

1996 ◽  
Vol 109 (11) ◽  
pp. 1517-1528 ◽  
Author(s):  
M. El-Nadi ◽  
S. Kamel ◽  
A. Hussein ◽  
Z. Abou-Moussa ◽  
E. A. Shaat ◽  
...  
Keyword(s):  
Pair Production ◽  
Electron Pair ◽  
High Energy ◽  
High Energy Collisions

COHERENT PAIR PRODUCTION IN CRYSTALS IN PRESENCE OF ACOUSTIC WAVES

2010 ◽  
Vol 25 (supp01) ◽  
pp. 47-54
Author(s):  
A. R. MKRTCHYAN ◽  
A. A. SAHARIAN ◽  
V. V. PARAZIAN
Keyword(s):  
Single Crystal ◽  
Pair Production ◽  
Cross Section ◽  
Acoustic Waves ◽  
High Energy ◽  
Deformation Field ◽  
Crystallographic Axis ◽  
Electron Positron ◽  
Coherent Pair ◽  
Electron Positron Pair

Coherent electron-positron pair production by high-energy photons is investigated in a periodically deformed single crystal with a complex base. The formula for the corresponding differential cross-section is derived for an arbitrary deformation field. The conditions are specified under which the influence of the deformation is considerable. The case is considered in detail when the photon enters into the crystal at small angles with respect to a crystallographic axis. The results of the numerical calculations are presented for SiO 2 single crystal in the case of the deformation field generated by the acoustic wave of the S type. It is shown that, in dependence of the parameters, the presence of deformation can either enhance or reduce the pair creation cross-section.

High-Energy Bremsstrahlung from a Silicon Single Crystal

1960 ◽  
Vol 4 (11) ◽  
pp. 572-575 ◽  
Author(s):  
G. Bologna ◽  
G. Diambrini ◽  
G. P. Murtas
Keyword(s):  
Single Crystal ◽  
High Energy ◽  
Silicon Single Crystal

High-energy electron pair production on oxygen

1991 ◽  
Vol 30 (9) ◽  
pp. 1235-1248 ◽  
Author(s):  
George L. Strobel1 ◽  
Robert A. Koss
Keyword(s):  
Pair Production ◽  
Electron Pair ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

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