Low-Energy Electron-Diffraction Intensity Calculations with a Realistic Crystal Potential

1970 ◽  
Vol 25 (8) ◽  
pp. 516-520 ◽  
Author(s):  
J. A. Strozier ◽  
R. O. Jones
1994 ◽  
Vol 01 (02n03) ◽  
pp. 221-227 ◽  
Author(s):  
H. HUANG ◽  
S.Y. TONG ◽  
U. MYLER ◽  
K. JACOBI

The Si ((113) 3×1-H structure has been investigated by a quantitative low-energy electron diffraction intensity analysis. A model with two Si dimers in the unit cell gives best agreement between the calculation and the experimental data. Three-dimensional atomic coordinates have been determined.


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