Infrared Absorption by Coupled Collective Cyclotron Excitation-Longitudinal-Optic Phonon Modes in InSb

1967 ◽  
Vol 18 (5) ◽  
pp. 159-162 ◽  
Author(s):  
R. Kaplan ◽  
E. D. Palik ◽  
R. F. Wallis ◽  
S. Iwasa ◽  
E. Burstein ◽  
...  
1985 ◽  
Vol 63 (9) ◽  
pp. 1205-1211 ◽  
Author(s):  
T. Steiner ◽  
M. L. W. Thewalt

The photoluminescence spectrum and transient behaviour of free and bound excitons in CdSe have been studied with both resonant and above band-gap excitation. The free- and bound-exciton lifetimes were found to be excitation-intensity dependent even at very low levels. In all cases, the free-exciton luminescence decayed more rapidly than that of the bound excitons. A comparison of the no-phonon and longitudinal-optic-phonon replicas of the free-exciton luminescence indicates that the observed doublet structure of the no-phonon spectrum arises from the two polariton branches. Resonant excitation of the donor and acceptor bound excitons revealed two-electron and two-hole replicas, respectively. We believe these to be the first reported two-hole transitions in CdSe. The initial rapid cooling of the free-exciton gas could be observed in a series of time-resolved spectra.


2011 ◽  
Vol 99 (25) ◽  
pp. 251904 ◽  
Author(s):  
Jung Gon Kim ◽  
Atsuhito Kimura ◽  
Yasuhito Kamei ◽  
Noriyuki Hasuike ◽  
Hiroshi Harima ◽  
...  

1998 ◽  
Vol 106 (8) ◽  
pp. 491-494 ◽  
Author(s):  
F. Demangeot ◽  
J. Frandon ◽  
M.A. Renucci ◽  
N. Grandjean ◽  
B. Beaumont ◽  
...  

1997 ◽  
Vol 483 ◽  
Author(s):  
E. Martín ◽  
M. Chafai ◽  
J. Jiménez

AbstractMicroRaman spectroscopy is used for characterizing defects in large SiC crystals with micrometer spatial resolution. The ability to identify microscopic inclusions of polytypes different than the crystal matrix is demonstrated; silicon and carbon inclusions and disorder effects are found in micropipes. A study of the Longitudinal Optic Phonon Plasmon Coupled (LOPC) Raman modes allowed to obtain local fluctuations of the net donor concentration, ND-NA, and the electron mobility around defects, which allowed impurity gettering effects to be observed.


2012 ◽  
Vol 100 (13) ◽  
pp. 139901
Author(s):  
Jung Gon Kim ◽  
Atsuhito Kimura ◽  
Yasuhito Kamei ◽  
Noriyuki Hasuike ◽  
Hiroshi Harima ◽  
...  

Author(s):  
В.А. Рыжов ◽  
Б.Т. Мелех ◽  
Л.П. Казакова

Abstract Infrared absorption spectra of chalcogenide alloys of the GST system with the compositions Ge14Sb29Te57 and Ge15Sb15Te70 in the amorphous and crystalline state were measured and analyzed in the range of 20 – 400 cm– 1 (0.6 – 12 THz) at room temperature. Absorption at these frequencies is due to the manifestation of correlated torsional vibrations of structural units of the amorphous alloy and phonon modes of the crystal. The performed assignment of absorption bands and the revealed differences in the IR spectra make it possible to more confidently represent the possible molecular mechanism of reversible amorphous-crystalline transformations in the studied phase-changing materials


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