Transmitted Phonon Drag Effect in Germanium at Very Low Temperatures

1964 ◽  
Vol 12 (9) ◽  
pp. 217-219 ◽  
Author(s):  
Edward J. Walker ◽  
Robert W. Keyes
Keyword(s):  
Low Temperatures ◽  
Phonon Drag ◽  
Drag Effect

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Phonon-drag effect in GaAs-AlxGa1−xAs heterostructures at very low temperatures

1988 ◽  
Vol 37 (11) ◽  
pp. 6377-6380 ◽  
Author(s):  
C. Ruf ◽  
H. Obloh ◽  
B. Junge ◽  
E. Gmelin ◽  
K. Ploog ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Phonon Drag ◽  
Drag Effect

Thermo-electricity at low temperatures VII. Thermo-electricity of the alkali metals between 2 and 20 °K

1958 ◽  
Vol 248 (1252) ◽  
pp. 107-118 ◽  
Keyword(s):  
Electric Power ◽  
Low Temperatures ◽  
Alkali Metals ◽  
Electric Force ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermo Electric ◽  
Temperature Range ◽  
The Absolute

In earlier work, the absolute thermo-electric force, E of the alkalis was measured from about 60°K down to about 4°K. The absolute thermo-electric power ( S=dE/dT ) could then be derived with fair accuracy down to perhaps 8°K. The thermo-electric power of all the alkali metals has now been measured directly between 2 and 20°K, and the Thomson heats derived therefrom. The results are compared with the theory both of the ‘normal’ thermo-electric power and the Gurevich or ‘phonon-drag’ effect. It is clear from the work that experiments below 1 °K in this field will be of much interest and a programme has been started in this temperature range.

Thermoelectric Power of Graphite Acceptor Compounds

1982 ◽  
Vol 20 ◽  
Author(s):  
Ko Sugihara
Keyword(s):  
Cross Section ◽  
Point Defects ◽  
Low Temperatures ◽  
Rayleigh Scattering ◽  
Boundary Scattering ◽  
Phonon Drag ◽  
Large Cross Section ◽  
Drag Effect ◽  
Temperature Variations ◽  
Graphite Intercalation

ABSTRACTTemperature variations of the thermopower (TEP) of acceptor graphite intercalation compounds (GIC) are very different from that of pristine graphite. At low temperatures the TEP increases monotonically with T, then levels off above 150 K. This behavior is ascribed to the phonon drag effect. In the region where the TEP is nearly constant, phonon relaxation is mainly controlled by the Rayleigh scattering due to point defects or impurities. This process leads to T-independent phonon drag TEP. The importance of Rayleigh scattering is due to the large cross section diameter of the Fermi surface in GIC. At low temperatures where the boundary scattering becomes important, the TEP is proportional to T3 . Detailed calculations are carried out by solving the phonon-carrier coupled Boltzmann equation.

Note on the Theory of Phonon-Drag Effect in Metals

1970 ◽  
Vol 39 (1) ◽  
pp. K51-K53 ◽  
Author(s):  
M. Rösler
Keyword(s):  
Phonon Drag ◽  
Drag Effect

scholarly journals Phonon drag effect in nanocomposite FeSb2

2013 ◽  
Vol 3 (1) ◽  
pp. 31-36 ◽  
Author(s):  
Mani Pokharel ◽  
Huaizhou Zhao ◽  
Kevin Lukas ◽  
Zhifeng Ren ◽  
Cyril Opeil ◽  
...  
Keyword(s):  
Phonon Drag ◽  
Drag Effect ◽  
Image Position

Abstract

Phonon-drag effect inTiSe2−xSxmixed compounds

1987 ◽  
Vol 36 (8) ◽  
pp. 4249-4253 ◽  
Author(s):  
J. -M. Lopez-Castillo ◽  
A. Amara ◽  
S. Jandl ◽  
J.-P. Jay-Gerin ◽  
C. Ayache ◽  
...  
Keyword(s):  
Phonon Drag ◽  
Drag Effect

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

Sign in / Sign up

Export Citation Format

Share Document