Low-temperaureO2−mobility in high-density neon gas

1993 ◽  
Vol 48 (2) ◽  
pp. 1379-1389 ◽  
Author(s):  
A. F. Borghesani ◽  
D. Neri ◽  
M. Santini
Keyword(s):  
High Density ◽  
Neon Gas

Density dependence of the electronic mobility in high density neon gas

1985 ◽  
Vol 108 (5-6) ◽  
pp. 255-258 ◽  
Author(s):  
A. Borghesani ◽  
L. Bruschi ◽  
M. Santini ◽  
G. Torzo
Keyword(s):  
Density Dependence ◽  
High Density ◽  
Neon Gas

Electron mobility in high density neon gas

1987 ◽  
Vol 62 (1) ◽  
pp. 89-92
Author(s):  
A. F. Borghesani ◽  
L. Bruschi ◽  
M. Santini ◽  
G. Torzo
Keyword(s):  
Electron Mobility ◽  
High Density ◽  
Neon Gas

Electron localization-delocalization transition in high-density neon gas

1992 ◽  
Vol 45 (12) ◽  
pp. 8803-8810 ◽  
Author(s):  
A. F. Borghesani ◽  
M. Santini
Keyword(s):  
High Density ◽  
Electron Localization ◽  
Neon Gas

scholarly journals Inhomogeneous gas model for electron mobility in high density neon gas

2003 ◽  
Vol 118 (6) ◽  
pp. 2760 ◽  
Author(s):  
A. F. Borghesani ◽  
T. F. O’Malley
Keyword(s):  
Electron Mobility ◽  
High Density ◽  
Neon Gas ◽  
Inhomogeneous Gas

Electron mobility in high density neon Gas

1984 ◽  
Vol 102 (3) ◽  
pp. 102-105 ◽  
Author(s):  
L. Bruschi ◽  
M. Santini ◽  
G. Torzo
Keyword(s):  
Electron Mobility ◽  
High Density ◽  
Neon Gas

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

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