scholarly journals Pauli form factor of quark and nontrivial topological structure of the QCD

2017 ◽  
Vol 96 (5) ◽  
Author(s):  
Baiyang Zhang ◽  
Andrey Radzhabov ◽  
Nikolai Kochelev ◽  
Pengming Zhang
Keyword(s):  
Form Factor ◽  
Topological Structure ◽  
Pauli Form Factor

scholarly journals The role of the GPD E in the determination of the parton angular momenta

2020 ◽  
Vol 35 (12) ◽  
pp. 2050093 ◽  
Author(s):  
P. Kroll
Keyword(s):  
Form Factor ◽  
Parton Distribution ◽  
Scale Dependence ◽  
Pauli Form Factor ◽  
Angular Momenta ◽  
Second Moments ◽  
Exclusive Processes

For the generalized parton distribution (GPD) E, extracted from hard exclusive processes and the Pauli form factor of the nucleon, the second moments for quarks and gluons at [Formula: see text] are calculated and their scale dependence analyzed. The parton angular momenta are subsequently determined and compared with other results.

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

MAGNETIC FORM FACTOR MEASUREMENTS IN CERIUM HEXABORIDE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-273-C7-278 ◽  
Author(s):  
P. Burlet ◽  
J. X. Boucherle ◽  
J. Rossat-Mignod ◽  
J. W. Cable ◽  
W. C. Koehler ◽  
...  
Keyword(s):  
Form Factor ◽  
Magnetic Form Factor

FORM FACTOR MEASUREMENTS IN CeTe

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-263-C7-271 ◽  
Author(s):  
J. X. Boucherle ◽  
D. Ravot ◽  
J. Schweizer
Keyword(s):  
Form Factor

FORM FACTOR MEASUREMENT IN FERROMAGNETIC COBALT ORTHOVANADATE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-253-C7-256
Author(s):  
H. Fuess ◽  
R. Müller ◽  
D. Schwabe ◽  
F. Tasset
Keyword(s):  
Form Factor ◽  
Factor Measurement ◽  
Ferromagnetic Cobalt

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

Uncovering Atherosclerotic Risk Disease Gene Based on Expression and Network Topological Structure*

2010 ◽  
Vol 37 (8) ◽  
pp. 916-922
Author(s):  
Hong WANG ◽  
Xiao-Li QU ◽  
Yan ZHAO ◽  
Jing ZHANG ◽  
Li-Na CHEN
Keyword(s):  
Topological Structure ◽  
Disease Gene
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