scholarly journals Holographic complexity for black branes with momentum relaxation

2021 ◽  
Vol 104 (8) ◽  
Author(s):  
Davood Mahdavian Yekta ◽  
H. Babaei-Aghbolagh ◽  
Komeil Babaei Velni ◽  
H. Mohammadzadeh
Keyword(s):  
2002 ◽  
Vol 14 (13) ◽  
pp. 3457-3468 ◽  
Author(s):  
N Balkan ◽  
M C Arikan ◽  
S Gokden ◽  
V Tilak ◽  
B Schaff ◽  
...  

1999 ◽  
Vol 270 (3-4) ◽  
pp. 280-288 ◽  
Author(s):  
V.I. Pipa ◽  
N.Z. Vagidov ◽  
V.V. Mitin ◽  
M. Stroscio

1975 ◽  
Vol 13 (5) ◽  
pp. 427-449 ◽  
Author(s):  
James T. Hynes ◽  
Raymond Kapral ◽  
Michael Weinberg

2006 ◽  
Vol 55 (6) ◽  
pp. 2961
Author(s):  
Wu Yu ◽  
Jiao Zhong-Xing ◽  
Lei Liang ◽  
Wen Jin-Hui ◽  
Lai Tian-Shu ◽  
...  

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 75-78 ◽  
Author(s):  
W. J. Gross ◽  
D. Vasileska ◽  
D. K. Ferry

We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e–e and e–i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.


1991 ◽  
Vol 6 (3) ◽  
pp. 175-180 ◽  
Author(s):  
N Balkan ◽  
R Gupta ◽  
Z Ciechanowska ◽  
B K Ridley ◽  
D Peacock ◽  
...  

2005 ◽  
Vol 71 (23) ◽  
Author(s):  
V. V. Kruglyak ◽  
R. J. Hicken ◽  
M. Ali ◽  
B. J. Hickey ◽  
A. T. G. Pym ◽  
...  

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