scholarly journals Exclusive J/Ψ and Ψ(2s) photo-production as a probe of QCD low x evolution equations

2021 ◽  
Vol 103 (7) ◽  
Author(s):  
Martin Hentschinski ◽  
Emilio Padrón Molina
Keyword(s):  
Evolution Equations ◽  
Low X ◽  
Photo Production

Low-x evolution equations in Möbius representation

2010 ◽  
Vol 41 (6) ◽  
pp. 935-938 ◽  
Author(s):  
V. S. Fadin ◽  
R. Fiore ◽  
A. V. Grabovsky ◽  
A. Papa
Keyword(s):  
Evolution Equations ◽  
Low X

scholarly journals ON THE SINGULAR BEHAVIOR OF STRUCTURE FUNCTIONS AT LOW x

1994 ◽  
Vol 09 (36) ◽  
pp. 3393-3402 ◽  
Author(s):  
H. NAVELET ◽  
R. PESCHANSKI ◽  
S. WALLON
Keyword(s):  
Structure Function ◽  
Evolution Equations ◽  
Structure Functions ◽  
Saddle Point Method ◽  
Proton Structure Function ◽  
Singular Behavior ◽  
Proton Structure ◽  
Small X ◽  
Model Independent ◽  
Low X

We discuss the phenomenological extraction of the leading j-plane singularity from singlet structure functions Fs estimated at small x. Using a saddle point method we show that [Formula: see text] is a suitable observable for this purpose in the region x≤10−2. As an application, we confront and distinguish in a model-independent way structure function parametrizations coming from two different QCD evolution equations, namely the Lipatov (or BFKL) equation and the Gribov-Lipatov-Altarelli-Parisi (or GLAP) equation. Recent results on the proton structure function F2 at HERA are discussed in this framework.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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