Dispersive and global spherical optical model with a local energy approximation for the scattering of neutrons by nuclei from1keVto200MeV

2004 ◽  
Vol 70 (1) ◽  
Author(s):  
B. Morillon ◽  
P. Romain
1996 ◽  
Vol 105 (5) ◽  
pp. 2076-2088 ◽  
Author(s):  
Sylvie Neyertz ◽  
David Brown ◽  
Julian H. R. Clarke

1965 ◽  
Vol 15 (4) ◽  
pp. 337-339 ◽  
Author(s):  
J.K. Dickens ◽  
R.M. Drisko ◽  
F.G. Perey ◽  
G.R. Satchler

Author(s):  
B. R. Ahn ◽  
N. J. Kim

High energy approximation in dynamic theory of electron diffraction involves some intrinsic problems. First, the loss of theoretical strictness makes it difficult to comprehend the phenomena of electron diffraction. Secondly, it is difficult to believe that the approximation is reasonable especially in the following cases: 1) when accelerating voltage is not sufficiently high, 2) when the specimen is thick, 3) when the angle between the surface normal of the specimen and zone axis is large, and 4) when diffracted beam with large diffraction angle is included in the calculation. However, until now the method to calculate the many beam dynamic electron diffraction without the high energy approximation has not been proposed. For this reason, the authors propose a method to eliminate the high energy approximation in the calculation of many beam dynamic electron diffraction. In this method, a perfect crystal with flat surface was assumed. The method was applied to the calculation of [111] zone axis CBED patterns of Si.


1974 ◽  
Vol 35 (C5) ◽  
pp. C5-7-C5-7
Author(s):  
J. P. JEUKENNE ◽  
A. LEJEUNE ◽  
C. MAHAUX

2002 ◽  
Vol 715 ◽  
Author(s):  
J. Krc ◽  
M. Zeman ◽  
O. Kluth ◽  
F. Smole ◽  
M. Topic

AbstractThe descriptive scattering parameters, haze and angular distribution functions of textured ZnO:Al transparent conductive oxides with different surface roughness are measured. An approach to determine the scattering parameters of all internal interfaces in p-i-n a-Si:H solar cells deposited on the glass/ZnO:Al substrates is presented. Using the determined scattering parameters as the input parameters of the optical model, a good agreement between the measured and simulated quantum efficiencies of the p-i-n a-Si:H solar cells with different interface roughness is achieved.


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