scholarly journals Sensitivity of tensor analyzing power in the processd+p→d+Xto the longitudinal isoscalar form factor of the Roper resonance electroexcitation

1999 ◽  
Vol 59 (3) ◽  
pp. 1526-1533 ◽  
Author(s):  
E. Tomasi-Gustafsson ◽  
M. P. Rekalo ◽  
R. Bijker ◽  
A. Leviatan ◽  
F. Iachello
Keyword(s):  
Form Factor ◽  
Roper Resonance ◽  
Analyzing Power

Analyzing power forπ−p elastic scattering in the energy region of the Roper resonance

1986 ◽  
Vol 33 (1) ◽  
pp. 296-299 ◽  
Author(s):  
A. Mokhtari ◽  
W. J. Briscoe ◽  
A. D. Eichon ◽  
D. H. Fitzgerald ◽  
G. J. Kim ◽  
...  
Keyword(s):  
Elastic Scattering ◽  
Energy Region ◽  
Roper Resonance ◽  
Analyzing Power

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

MAGNETIC FORM FACTOR MEASUREMENTS IN CERIUM HEXABORIDE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-273-C7-278 ◽  
Author(s):  
P. Burlet ◽  
J. X. Boucherle ◽  
J. Rossat-Mignod ◽  
J. W. Cable ◽  
W. C. Koehler ◽  
...  
Keyword(s):  
Form Factor ◽  
Magnetic Form Factor

FORM FACTOR MEASUREMENTS IN CeTe

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-263-C7-271 ◽  
Author(s):  
J. X. Boucherle ◽  
D. Ravot ◽  
J. Schweizer
Keyword(s):  
Form Factor

FORM FACTOR MEASUREMENT IN FERROMAGNETIC COBALT ORTHOVANADATE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-253-C7-256
Author(s):  
H. Fuess ◽  
R. Müller ◽  
D. Schwabe ◽  
F. Tasset
Keyword(s):  
Form Factor ◽  
Factor Measurement ◽  
Ferromagnetic Cobalt

ANALYZING POWER MEASUREMENTS FOR p-p ELASTIC SCATTERING AT HIGH-P⊥2

1985 ◽  
Vol 46 (C2) ◽  
pp. C2-303-C2-305
Author(s):  
R. S. Raymond ◽  
K. A. Brown ◽  
R. J. Bruni ◽  
P. R. Cameron ◽  
D. G. Crabb ◽  
...  
Keyword(s):  
Elastic Scattering ◽  
Power Measurements ◽  
Analyzing Power

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

Form Factor of an Open-Shell Atom

2000 ◽  
Vol 89 (1) ◽  
pp. 4
Author(s):  
A. N. Khoperskiı̆
Keyword(s):  
Form Factor ◽  
Open Shell
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