How slip traces modify the Au(111) reconstruction

2019 ◽  
Vol 99 (19) ◽  
Author(s):  
D. Chauraud ◽  
J. Durinck ◽  
M. Drouet ◽  
L. Vernisse ◽  
J. Bonneville ◽  
...  
Keyword(s):  
Slip Traces

Observation of Superlattice Dislocations on Cube Planes in Ni3Al

1973 ◽  
Vol 31 ◽  
pp. 174-175 ◽  
Author(s):  
J. M. Oblak ◽  
W. H. Rand
Keyword(s):  
Nearest Neighbor ◽  
Antiphase Boundary ◽  
Nearest Neighbors ◽  
High Energy ◽  
Cross Slip ◽  
Octahedral Plane ◽  
Trapping Mechanism ◽  
Slip Traces

The energy of an a/2 <110> shear antiphase. boundary in the Ll2 expected to be at a minimum on {100} cube planes because here strue ture is there is no violation of nearest-neighbor order. The latter however does involve the disruption of second nearest neighbors. It has been suggested that cross slip of paired a/2 <110> dislocations from octahedral onto cube planes is an important dislocation trapping mechanism in Ni3Al; furthermore, slip traces consistent with cube slip are observed above 920°K.Due to the high energy of the {111} antiphase boundary (> 200 mJ/m2), paired a/2 <110> dislocations are tightly constricted on the octahedral plane and cannot be individually resolved.

Slip traces caused by plastic deformation during recrystallization of thin metal sheets

1994 ◽  
Vol 52 ◽  
pp. 620-621
Author(s):  
H. Lin ◽  
D. P. Pope
Keyword(s):  
Grain Size ◽  
Grain Boundaries ◽  
Sample Thickness ◽  
List Type ◽  
Metal Sheets ◽  
Second Phases ◽  
Slip Traces ◽  
Series Of Experiments ◽  
Cold Rolled ◽  
Individual Grains

During a study of mechanical properties of recrystallized B-free Ni3Al single crystals, regularly spaced parallel traces within individual grains were discovered on the surfaces of thin recrystallized sheets, see Fig. 1. They appeared to be slip traces, but since we could not find similar observations in the literature, a series of experiments was performed to identify them. We will refer to them “traces”, because they contain some, if not all, of the properties of slip traces. A variety of techniques, including the Electron Backscattering Pattern (EBSP) method, was used to ascertain the composition, geometry, and crystallography of these traces. The effect of sample thickness on their formation was also investigated.In summary, these traces on the surface of recrystallized Ni3Al have the following properties:1.The chemistry and crystallographic orientation of the traces are the same as the bulk. No oxides or other second phases were observed.2.The traces are not grooves caused by thermal etching at previous locations of grain boundaries.3.The traces form after recrystallization (because the starting Ni3Al is a single crystal).4.For thicknesses between 50 μm and 720 μm, the density of the traces increases as the sample thickness decreases. Only one set of “protrusion-like” traces is visible in a given grain on the thicker samples, but multiple sets of “cliff-like” traces are visible on the thinner ones (See Fig. 1 and Fig. 2).5.They are linear and parallel to the traces of {111} planes on the surface, see Fig. 3.6.Some of the traces terminate within the interior of the grains, and the rest of them either terminate at or are continuous across grain boundaries. The portion of latter increases with decreasing thickness.7.The grain size decreases with decreasing thickness, the decrease is more pronounced when the grain size is comparable with the thickness, Fig. 4.8.Traces also formed during the recrystallization of cold-rolled polycrystalline Cu thin sheets, Fig. 5.

Dislocation Dynamics in Icosahedral Al-Pd-Mn Single Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
Ulrich Messerschmidt ◽  
Martin Bartsch ◽  
Bert Geyer ◽  
Lars Ledig ◽  
Michael Feuerbacher ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Stress Exponent ◽  
High Voltage ◽  
Dislocation Dynamics ◽  
Slip Mechanism ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
Slip Planes ◽  
Slip Traces

AbstractThe paper reviews results from in situ straining experiments on Al-Pd-Mn single quasicrystals in a high-voltage electron microscope. Slip planes were determined from the orientation and width of slip traces. Dislocations are generated by a specific cross slip mechanism. On some slip traces, dislocations move at two distinctly different velocities. A stress exponent was determined on a single dislocation by observing its displacement under decreasing load. The in situexperiments reveal the behaviour of individual dislocations in a temperature range where the deformation of bulk specimens is strongly affected by recovery.

Formation of slip traces during recrystallization of thin metal sheets

1995 ◽  
Vol 71 (6) ◽  
pp. 1241-1253 ◽  
Author(s):  
Hui Lin ◽  
D. P. Pope
Keyword(s):  
Thin Metal ◽  
Metal Sheets ◽  
Slip Traces

High Temperature Deformation of Single Crystalline Cr3Si (A15) Intermetallic Compound

1990 ◽  
Vol 213 ◽  
Author(s):  
C. Steve Chang ◽  
D. P. Pope
Keyword(s):  
High Temperature ◽  
Intermetallic Compound ◽  
Single Crystals ◽  
Intermetallic Compounds ◽  
High Temperature Deformation ◽  
Temperature Deformation ◽  
Slip Systems ◽  
Compression Tests ◽  
Single Crystalline ◽  
Slip Traces

AbstractHigh temperature compression tests were performed on Cr 3Si single crystalline and poly crystalline samples. Slip systems were determined to be of the {001}<010> type based on an analysis of slip traces and Laue spots. Single crystals show significant compressive ductility at temperatures above 0.7Tm. The implication of cube slip on the ductility of A15-type intermetallic compounds is discussed.

Quantitative numerical method for analysing slip traces observed by AFM

2013 ◽  
Vol 1 (1) ◽  
pp. 015002 ◽  
Author(s):  
J Veselý ◽  
C Coupeau ◽  
J Bonneville ◽  
M Cieslar
Keyword(s):  
Numerical Method ◽  
Slip Traces

scholarly journals Kinetics of Anticrossing between Slip Traces and Vicinal Steps on Crystal Surfaces

2019 ◽  
Author(s):  
C. Coupeau ◽  
D.M. Kazantsev ◽  
M. Drouet ◽  
V.L. Alperovich
Keyword(s):  
Crystal Surfaces ◽  
Slip Traces ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document