Transport properties of thin flakes of the antiferromagnetic topological insulator MnBi2Te4

2019 ◽  
Vol 99 (15) ◽  
Author(s):  
Jianhua Cui ◽  
Mengzhu Shi ◽  
Honghui Wang ◽  
Fanghang Yu ◽  
Tao Wu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Topological Insulator

Topological insulator nanostructures: Materials synthesis, Raman spectroscopy, and transport properties

2011 ◽  
Vol 7 (2) ◽  
pp. 208-217 ◽  
Author(s):  
Hui Li ◽  
Hailin Peng ◽  
Wenhui Dang ◽  
Lili Yu ◽  
Zhongfan Liu
Keyword(s):  
Raman Spectroscopy ◽  
Transport Properties ◽  
Topological Insulator ◽  
Materials Synthesis

scholarly journals Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi2Se3

2012 ◽  
Vol 36 ◽  
pp. 638-643 ◽  
Author(s):  
Z.J. Li ◽  
Y. Liu ◽  
S.C. White ◽  
P. Wahl ◽  
X.M. Xie ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Transport Properties ◽  
Topological Insulator ◽  
Single Crystal Growth

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

2015 ◽  
Vol 106 (5) ◽  
pp. 053103 ◽  
Author(s):  
E. I. Rogacheva ◽  
A. V. Budnik ◽  
A. Yu. Sipatov ◽  
O. N. Nashchekina ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Quantum Oscillations

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

2017 ◽  
Vol 46 (7) ◽  
pp. 3949-3957 ◽  
Author(s):  
E. I. Rogacheva ◽  
A. V. Budnik ◽  
O. N. Nashchekina ◽  
A. V. Meriuts ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Thickness oscillations of the transport properties in n-type Bi2Te3 topological insulator thin films

2015 ◽  
Vol 594 ◽  
pp. 109-114 ◽  
Author(s):  
E.I. Rogacheva ◽  
A.V. Budnik ◽  
A.Yu. Sipatov ◽  
O.N. Nashchekina ◽  
A.G. Fedorov ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator

scholarly journals Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO3

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jihwey Park ◽  
Yeong-Ah Soh ◽  
Gabriel Aeppli ◽  
Xiao Feng ◽  
Yunbo Ou ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Transport Properties ◽  
Topological Insulator ◽  
Topological Insulators ◽  
Surface States ◽  
Crystal Quality ◽  
X Rays ◽  
Capping Layer ◽  
Subtle Effect

Abstract Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) films grown on SrTiO3 (1 1 1) substrates with and without a Te capping layer. We find that both the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.

scholarly journals 2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Olivio Chiatti ◽  
Christian Riha ◽  
Dominic Lawrenz ◽  
Marco Busch ◽  
Srujana Dusari ◽  
...  
Keyword(s):  
Transport Properties ◽  
Single Crystals ◽  
Topological Insulator

Transport properties in a Sb–Te binary topological-insulator system

2013 ◽  
Vol 25 (34) ◽  
pp. 345801 ◽  
Author(s):  
Y Takagaki ◽  
A Giussani ◽  
J Tominaga ◽  
U Jahn ◽  
R Calarco
Keyword(s):  
Transport Properties ◽  
Topological Insulator

Transport Properties of Topological Insulator Bi0.83Sb0.17 Nanowires

2015 ◽  
Vol 1785 ◽  
pp. 1-6
Author(s):  
L.A. Konopko ◽  
A.A. Nikolaeva ◽  
T.E. Huber ◽  
J.P. Ansermet
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Transport Properties ◽  
Topological Insulator ◽  
Energy Gap ◽  
Oscillation Amplitude ◽  
Glass Capillary ◽  
Wire Axis ◽  
Temperature Dependences ◽  
The Wire

ABSTRACTWe have investigated the transport properties of topological insulator based on single-crystal Bi0.83Sb0.17 nanowires. The single-crystal nanowire samples in the diameter range 200 nm – 1.1 μm were prepared by the high frequency liquid phase casting in a glass capillary using an improved Ulitovsky technique; they were cylindrical single-crystals with (1011) orientation along the wire axis. In this orientation, the wire axis makes an angle of 19.5o with the bisector axis C1 in the bisector-trigonal plane. Bi0.83Sb0.17 is a narrow gap semiconductor with energy gap at L point of Brillouin zone ΔE= 21 meV. In accordance with the measurements of the temperature dependence of the resistivity of the samples resistance increases with decreasing temperature, but at low temperatures decrease in the resistance is observed. This effect, decrease in the resistance, is a clear manifestation of the interesting properties of topological insulators - the presence on its surface of a highly conducting zone. The Arrhenius plot of resistance R in samples with diameter d=1.1 µm and d=200 nm indicates a thermal activation behavior with an activation gap ΔE= 21 and 35 meV, respectively, which proves the presence of the quantum size effect in these samples. We found that in the range of diameter 1100 nm - 200 nm when the diameter decreases the energy gap is growing as 1/d. We have investigated magnetoresistance of Bi0.83Sb0.17 nanowires at various magnetic field orientations. From the temperature dependences of Shubnikov de Haas oscillation amplitude for different orientation of magnetic field we have calculated the cyclotron mass mc and Dingle temperature TD for longitudinal and transverse (B||C3 and B||C2) directions of magnetic fields, which equal 1.96*10-2m0, 9.8 K, 8.5*10-3m0 , 9.4 K and 1.5*10-1m0 , 2.8 K respectively. The observed effects are discussed.

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