scholarly journals Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP

2019 ◽  
Vol 99 (12) ◽  
Author(s):  
Q. Niu ◽  
W. C. Yu ◽  
E. I. Paredes Aulestia ◽  
Y. J. Hu ◽  
Kwing To Lai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Carrier

High-field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures

1993 ◽  
Vol 184 (1-4) ◽  
pp. 211-215 ◽  
Author(s):  
M. van der Burgt ◽  
A. Van Esch ◽  
F.M. Peeters ◽  
M. Van Hove ◽  
G. Borghs ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
High Carrier

Interface recombination of Cu 2 ZnSnS 4 solar cells leveraged by high carrier density and interface defects

Solar RRL ◽  
2021 ◽  
Author(s):  
Jianjun Li ◽  
Jialiang Huang ◽  
Yanchan Huang ◽  
Hitoshi Tampo ◽  
Takeaki Sakurai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Density ◽  
Interface Recombination ◽  
Interface Defects ◽  
High Carrier

Field Effect Mobility of F16PcCu Films in Various Gas Atmospheres

1999 ◽  
Vol 03 (07) ◽  
pp. 667-671 ◽  
Author(s):  
HIROKAZU TADA ◽  
HIROSHI TOUDA ◽  
MASAKI TAKADA ◽  
KAZUMI MATSUSHIGE
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Room Temperature ◽  
Gas Adsorption ◽  
Quick Recovery ◽  
Thermally Activated ◽  
High Carrier ◽  
Gas Molecules

The electron mobility of hexadecafluorophthalocyaninato-copper ( F 16 PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10−3 cm 2 V −1 s −1 at room temperature. The electrical conductivity and carrier density were 4.4 × 10−5 S cm −1 and 1.4 × 1017 cm −3 respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10−3 cm 2 V −1 s −1 in NH 3 atmosphere (100%, 1 atm) and decreased by 75% in the presence of O 2 gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.

High-Carrier-Density Pump-Probe Measurements of Low-Temperature Grown GaAs

1997 ◽  
Author(s):  
T. S. Sosnowski ◽  
T. B. Norris ◽  
H. H. Wang ◽  
P. Grenier ◽  
J. F. Whitaker ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Density ◽  
Pump Probe ◽  
High Carrier ◽  
Probe Measurements ◽  
Low Temperature Grown Gaas

High carrier density CeO2 dielectrics—implications for MOS devices

2004 ◽  
Vol 24 (6) ◽  
pp. 1459-1462 ◽  
Author(s):  
Jyrki Lappalainen ◽  
Darja Kek ◽  
Harry L. Tuller
Keyword(s):  
Carrier Density ◽  
Mos Devices ◽  
High Carrier
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