Route toward semiconductor magnonics: Light-induced spin-wave nonreciprocity in a YIG/GaAs structure

2019 ◽  
Vol 99 (5) ◽  
Author(s):  
A. V. Sadovnikov ◽  
E. N. Beginin ◽  
S. E. Sheshukova ◽  
Yu. P. Sharaevskii ◽  
A. I. Stognij ◽  
...  
Keyword(s):  
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.


1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1599-C8-1600
Author(s):  
K. Nakamura ◽  
M. Mino ◽  
H. Yamazaki

1976 ◽  
Vol 47 (3) ◽  
pp. 1151-1157 ◽  
Author(s):  
C. H. Wilts ◽  
O. G. Ramer

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Alex. S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Samh Memshawy ◽  
Paolo Bortolotti ◽  
Vincent Cros ◽  
...  

AbstractNiFe-based vortex spin-torque nano-oscillators (STNO) have been shown to be rich dynamic systems which can operate as efficient frequency generators and detectors, but with a limitation in frequency determined by the gyrotropic frequency, typically sub-GHz. In this report, we present a detailed analysis of the nature of the higher order spin wave modes which exist in the Super High Frequency range (3–30 GHz). This is achieved via micromagnetic simulations and electrical characterisation in magnetic tunnel junctions, both directly via the spin-diode effect and indirectly via the measurement of the coupling with the gyrotropic critical current. The excitation mechanism and spatial profile of the modes are shown to have a complex dependence on the vortex core position. Additionally, the inter-mode coupling between the fundamental gyrotropic mode and the higher order modes is shown to reduce or enhance the effective damping depending upon the sense of propagation of the confined spin wave.


2021 ◽  
Vol 103 (21) ◽  
Author(s):  
Anders J. Eklund ◽  
Mykola Dvornik ◽  
Fatjon Qejvanaj ◽  
Sheng Jiang ◽  
Sunjae Chung ◽  
...  

2021 ◽  
Vol 534 ◽  
pp. 168046
Author(s):  
Zhen-wei Zhou ◽  
Xi-guang Wang ◽  
Yao-zhuang Nie ◽  
Qing-lin Xia ◽  
Guang-hua Guo

Sign in / Sign up

Export Citation Format

Share Document