scholarly journals Charge state switching of the divacancy defect in 4H -SiC

2018 ◽  
Vol 98 (21) ◽  
Author(s):  
Ariana Beste ◽  
DeCarlos E. Taylor ◽  
D. Andrew Golter ◽  
Chih W. Lai
Keyword(s):  
Charge State ◽  
State Switching

scholarly journals Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

2016 ◽  
Vol 7 ◽  
pp. 1727-1735 ◽  
Author(s):  
Christoph Schreyvogel ◽  
Vladimir Polyakov ◽  
Sina Burk ◽  
Helmut Fedder ◽  
Andrej Denisenko ◽  
...  
Keyword(s):  
Quantum Information ◽  
Charge State ◽  
Single Photon ◽  
Schottky Contact ◽  
Nitrogen Vacancy ◽  
Diode Structure ◽  
Diamond Surface ◽  
Switching Frequency ◽  
Near Surface ◽  
State Switching

In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.

scholarly journals Charge state switching of Cu acceptors in ZnO nanorods

2017 ◽  
Vol 110 (12) ◽  
pp. 121907 ◽  
Author(s):  
M. Azizar Rahman ◽  
Mika T. Westerhausen ◽  
Christian Nenstiel ◽  
Sumin Choi ◽  
Axel Hoffmann ◽  
...  
Keyword(s):  
Charge State ◽  
Zno Nanorods ◽  
State Switching

Charge state switching of deep levels for low-power optical modulation in silicon waveguides

2011 ◽  
Vol 36 (19) ◽  
pp. 3717 ◽  
Author(s):  
D. F. Logan ◽  
P. Velha ◽  
M. Sorel ◽  
R. M. De La Rue ◽  
G. Wojcik ◽  
...  
Keyword(s):  
Low Power ◽  
Charge State ◽  
Deep Levels ◽  
Optical Modulation ◽  
Silicon Waveguides ◽  
State Switching

scholarly journals Measurements of charge state distributions of 0.74 and 1.4  MeV/u heavy ions passing through dilute gases

2017 ◽  
Vol 20 (4) ◽  
Author(s):  
P. Scharrer ◽  
Ch. E. Düllmann ◽  
W. Barth ◽  
J. Khuyagbaatar ◽  
A. Yakushev ◽  
...  
Keyword(s):  
Charge State ◽  
Heavy Ions ◽  
Dilute Gases ◽  
Charge State Distributions

Ground-state switching characteristics in vertically-coupled InGaN/GaN quantum dots

2013 ◽  
Vol 63 (11) ◽  
pp. 2269-2272 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Woo-Pyo Hong ◽  
Jong-Jae Kim
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
State Switching ◽  
Switching Characteristics
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