scholarly journals Phase transition and electronic structure evolution of MoTe2 induced by W substitution

2018 ◽  
Vol 98 (14) ◽  
Author(s):  
Wencan Jin ◽  
Theanne Schiros ◽  
Yi Lin ◽  
Junzhang Ma ◽  
Rui Lou ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electronic Structure ◽  
Structure Evolution

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

Enhanced Fast Response to Hg0 by Adsorption-Induced Electronic Structure Evolution of Ti2C Nanosheet

2021 ◽  
pp. 148925
Author(s):  
Tao Yang ◽  
Xingang Jiang ◽  
Wencai Yi ◽  
Xiaomin Cheng ◽  
Tiexin Cheng
Keyword(s):  
Electronic Structure ◽  
Fast Response ◽  
Structure Evolution

Phase Transition of As-Milled and Annealed CrCuFeMnNi High-Entropy Alloy Powder

NANO ◽  
2018 ◽  
Vol 13 (09) ◽  
pp. 1850100 ◽  
Author(s):  
Rui-Feng Zhao ◽  
Bo Ren ◽  
Guo-Peng Zhang ◽  
Zhong-Xia Liu ◽  
Jian-Jian Zhang
Keyword(s):  
Phase Transition ◽  
Solution Structure ◽  
Milling Time ◽  
Structure Evolution ◽  
High Entropy Alloy ◽  
Chemical Homogeneity ◽  
High Entropy ◽  
Dynamic Phase Transition ◽  
Fcc Phase ◽  
Bcc Phase

The CrCuFeMnNi high entropy alloy (HEA) powder was synthesized by mechanical alloying. The effects of milling time and subsequent annealing on the structure evolution, thermostability and magnetic property were investigated. After 50[Formula: see text]h of milling, the CrCuFeMnNi HEA powder consisted of a major FCC phase and a small amount of BCC phase. The crystallite size and strain lattice of 50[Formula: see text]h-ball-milled CrCuFeMnNi HEA powder were 12[Formula: see text]nm and 1.02%, respectively. The powder exhibited refined morphology and excellent chemical homogeneity. The supersaturated solid solution structure of the as-milled HEA powder transformed into FCC1, FCC2, a small amount of BCC and [Formula: see text] phase in annealed state. Most of the BCC phase decomposed into FCC (mainly FCC2 phase) and [Formula: see text] phases, and the dynamic phase transition was almost in equilibrium at 900[Formula: see text]C. The saturated magnetization and coercivity force of the 50[Formula: see text]h-ball-milled CrCuFeMnNi HEA powder were respectively 16.1[Formula: see text]emu/g and 56.2[Formula: see text]Oe.

Unconventional Electronic Structure Evolution with Hole Doping inBi2Sr2CaCu2O8+δ: Angle-Resolved Photoemission Results

1996 ◽  
Vol 76 (25) ◽  
pp. 4841-4844 ◽  
Author(s):  
D. S. Marshall ◽  
D. S. Dessau ◽  
A. G. Loeser ◽  
C-H. Park ◽  
A. Y. Matsuura ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Structure Evolution ◽  
Hole Doping
Sign in / Sign up

Export Citation Format

Share Document