scholarly journals Transverse vortex commensurability effect and sign change of the Hall voltage in superconducting YBa2Cu3O7−δ thin films with a nanoscale periodic pinning landscape

2018 ◽  
Vol 98 (10) ◽  
Author(s):  
G. Zechner ◽  
W. Lang ◽  
M. Dosmailov ◽  
M. A. Bodea ◽  
J. D. Pedarnig
Keyword(s):  
Thin Films ◽  
Hall Voltage ◽  
Periodic Pinning ◽  
Sign Change

Vortex phases in superconducting Nb thin films with periodic pinning

2005 ◽  
Vol 72 (17) ◽  
Author(s):  
J. E. Villegas ◽  
E. M. Gonzalez ◽  
Z. Sefrioui ◽  
J. Santamaria ◽  
J. L. Vicent
Keyword(s):  
Thin Films ◽  
Periodic Pinning ◽  
Vortex Phases

Scaling of Resistivities in MgB2

2006 ◽  
Vol 47 ◽  
pp. 113-117
Author(s):  
Petr Vašek
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Critical Temperature ◽  
External Magnetic Field ◽  
Transport Current ◽  
Zero Magnetic Field ◽  
Superconducting Transition ◽  
Hall Voltage ◽  
Transition Range ◽  
Width Of Superconducting Transition

Longitudinal and transverse voltages have been measured on thin films of MgB2 with different width of superconducting transition range. The study has been performed in zero and nonzero external magnetic fields. The non-zero transverse voltage has been observed in close vicinity of the critical temperature in zero external magnetic field while far enough from Tc this voltage has been zero. In magnetic field it merges into transverse voltage which is an even function with respect to the direction of the field. Usual Hall voltage starts to appear with increasing magnetic field. At the highest field the even voltage disappears and only the Hall voltage is measurable i.e. the transverse even voltage is suppressed with increasing magnetic field and increasing transport current as well. New scaling between transverse and longitudinal resistivities has been observed in the form ρxy~dρxx/dT . This correlation is valid not only in the zero magnetic field but also in nonzero magnetic field where transverse even voltage can be detected. Several models trying to explain observed results are discussed. The most promising seems to be guided motion of the vortices.

Resistivity and Hall Voltage Investigation of Phosphorus Segregation in Polycrystalline Si1-xGex Thin Films

2000 ◽  
Vol 609 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Atmospheric Pressure ◽  
Temperature Measurements ◽  
Hall Voltage ◽  
Phosphorus Segregation ◽  
Dopant Segregation ◽  
Hall Measurements ◽  
Chemically Vapor Deposited

ABSTRACTDopant segregation in atmospheric-pressure, chemically vapor deposited (APCVD), ~300 nm thick, polycrystalline Si0.95Ge0.5 and Si0.9Ge0.1 thin films, implanted at 80 KeV with 6×1013 to 5×1014 P/cm2 and annealed at 800 °C for 1 hr, was investigated using a combination of Hall and conductivity vs. temperature measurements. Hall measurements, feasible only in heavier doped films, showed that 29% of the phosphorus in Si0.9Ge0.1 and 42% of phosphorus in Si0.95Ge0.05 was electrically inactive. The loss was attributed to dopant segregating to grain boundaries. The density of grain boundaries states was also found to increase slightly with increasing Ge content, from 3.6×1012/cm2 in Si0.95Ge0.05 to 4.4×1012/cm2 in Si0.9Ge0.1.

scholarly journals Publisher's Note: “Hall voltage reversal and structural phase transition in VO2 thin films” [Appl. Phys Lett. 116, 082106 (2020)]

2020 ◽  
Vol 116 (13) ◽  
pp. 139901
Author(s):  
J. J. Feng ◽  
C. F. Li ◽  
C. L. Luo ◽  
H. Yang ◽  
A. H. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Structural Phase Transition ◽  
Structural Phase ◽  
Hall Voltage ◽  
Vo2 Thin Films

ANOMALOUS HALL EFFECT NEAR Tc IN HIGH-Tc SUPERCONDUCTORS

2000 ◽  
Vol 14 (15) ◽  
pp. 547-551 ◽  
Author(s):  
P. H. CHANG ◽  
H. C. YANG ◽  
H. E. HORNG
Keyword(s):  
Hall Effect ◽  
Hall Coefficient ◽  
Mixed State ◽  
Anomalous Hall Effect ◽  
Flux Creep ◽  
Hall Voltage ◽  
High Tc Superconductors ◽  
High Tc ◽  
Sign Change ◽  
Entry Behavior

A possible mechanism in the anomalous Hall coefficient in mixed state of high-T c superconductors was presented in this paper. The Hall voltage due to flux creep is the origin of the observed Hall anomaly. The calculated Hall coefficient exhibits a sign change as well as a re-entry behavior, which agree with experiments, qualitatively.

Mechanisms of periodic pinning in superconducting thin films

2004 ◽  
Vol 40 (4) ◽  
pp. 459-462 ◽  
Author(s):  
M. I. Montero ◽  
O. M. Stoll ◽  
Ivan K. Schuller
Keyword(s):  
Thin Films ◽  
Superconducting Thin Films ◽  
Periodic Pinning

scholarly journals Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 675
Author(s):  
Gernot Heine ◽  
Wolfgang Lang ◽  
Roman Rössler ◽  
Johannes D. Pedarnig
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Hall Effect ◽  
Normal State ◽  
Measurement Method ◽  
High Temperature Superconductor ◽  
Hall Voltage ◽  
Temperature Dependent ◽  
Out Of Plane ◽  
Anisotropic Transport

The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa2Cu3O7-δ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO3 substrate allows one to investigate these anisotropic transport properties in a planar and well-defined sample geometry employing a homogeneous current density. In the normal state, the Hall voltage probed parallel to the copper-oxide layers is positive and strongly temperature dependent, whereas the out-of-plane Hall voltage is negative and almost temperature independent. The results confirm previous measurements on single crystals by an entirely different measurement method and demonstrate that vicinal thin films might be also useful for investigations of other layered nanomaterials.

EXTRAORDINARY HALL EFFECT IN ULTRA-THIN Fe–Pt FILMS AND FABRICATION OF NANOMICRO HALL DEVICES

2004 ◽  
Vol 03 (01n02) ◽  
pp. 149-154 ◽  
Author(s):  
V. N. MATVEEV ◽  
V. A. BEREZIN ◽  
V. T. VOLKOV ◽  
A. A. FIRSOV ◽  
O. V. KONONENKO ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Plasma Etching ◽  
Laser Evaporation ◽  
Hall Voltage ◽  
Field Sensitivity ◽  
Extraordinary Hall Effect ◽  
Pt Alloy ◽  
D 20 ◽  
Pt Films

Fe – Pt alloy thin and ultra thin films were deposited by the pulse laser evaporation method. Micronano Hall devices were fabricated from ultra thin films by an Ar plasma etching process using electron beam lithography procedures. The extraordinary Hall effect (EHE) in Fe – Pt alloy thin and ultra thin films and micronano Hall devices was investigated. The film thickness reduction is found to cause an increase in Hall voltage, which means an enhancement of field sensitivity of the Hall sensor. Maximum sensitivity S=260 Ω/ T was measured in ultra thin film with thickness d=20 Å.

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