Doping effects on the ferroelectric transition of multiferroic Y(Mn,Al/Ga)O3

2018 ◽  
Vol 98 (8) ◽  
Author(s):  
Hasung Sim ◽  
Haeri Kim ◽  
Kisoo Park ◽  
Martin Lilienblum ◽  
Manfred Fiebig ◽  
...  
Keyword(s):  
Ferroelectric Transition ◽  
Doping Effects

Local atomic structure of relaxor ferroelectric solids studied by pulsed neutron scattering

1994 ◽  
Vol 52 ◽  
pp. 554-555
Author(s):  
T. Egami ◽  
H. D. Rosenfeld ◽  
S. Teslic
Keyword(s):  
Neutron Scattering ◽  
Atomic Structure ◽  
Argonne National Laboratory ◽  
Relaxor Ferroelectrics ◽  
Relaxor Ferroelectric ◽  
Crystallographic Structure ◽  
Chemical Inhomogeneity ◽  
Distribution Analysis ◽  
Ferroelectric Transition ◽  
Pulsed Neutron

Relaxor ferroelectrics, such as Pb(Mg1/3Nb2/3)O3 (PMN) or (Pb·88La ·12)(Zr·65Ti·35)O3 (PLZT), show diffuse ferroelectric transition which depends upon frequency of the a.c. field. In spite of their wide use in various applications details of their atomic structure and the mechanism of relaxor ferroelectric transition are not sufficiently understood. While their crystallographic structure is cubic perovskite, ABO3, their thermal factors (apparent amplitude of thermal vibration) is quite large, suggesting local displacive disorder due to heterovalent ion mixing. Electron microscopy suggests nano-scale structural as well as chemical inhomogeneity.We have studied the atomic structure of these solids by pulsed neutron scattering using the atomic pair-distribution analysis. The measurements were made at the Intense Pulsed Neutron Source (IPNS) of Argonne National Laboratory. Pulsed neutrons are produced by a pulsed proton beam accelerated to 750 MeV hitting a uranium target at a rate of 30 Hz. Even after moderation by a liquid methane moderator high flux of epithermal neutrons with energies ranging up to few eV’s remain.

Doping effects on the geometric and electronic structure of tin clusters

2019 ◽  
Vol 21 (44) ◽  
pp. 24478-24488 ◽  
Author(s):  
Martin Gleditzsch ◽  
Marc Jäger ◽  
Lukáš F. Pašteka ◽  
Armin Shayeghi ◽  
Rolf Schäfer
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Density Functional ◽  
Beam Deflection ◽  
Functional Theory ◽  
Doping Effects ◽  
Depth Analysis ◽  
Trajectory Simulations

In depth analysis of doping effects on the geometric and electronic structure of tin clusters via electric beam deflection, numerical trajectory simulations and density functional theory.

DOPING EFFECTS ON THERMAL TRANSPORT PROPERTIES OF PEDOT

2018 ◽  
Author(s):  
Xiaoxiang Yu ◽  
Ruiyang Li ◽  
Takuma Shiga ◽  
Lei Feng ◽  
Junichiro Shiomi ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermal Transport ◽  
Thermal Transport Properties ◽  
Doping Effects

The Influence of Doping on the Etching of Si(111)

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer
Keyword(s):  
Mass Spectrometer ◽  
Doping Level ◽  
Etch Rate ◽  
Plasma Reactors ◽  
Doping Effects ◽  
Mass Spectrometer System ◽  
Spectrometer System

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

A Sims Study of Electroluminescent Phosphors: SrS:Cu

1999 ◽  
Vol 560 ◽  
Author(s):  
Lily H. Zhang ◽  
Larry Wang ◽  
Wusheng Tong ◽  
YongBao Xin
Keyword(s):  
Material Characterization ◽  
Secondary Ion Mass Spectrometry ◽  
Dopant Concentration ◽  
Thermal Quenching ◽  
Areal Density ◽  
Device Performance ◽  
Cell Temperature ◽  
Co Doping ◽  
Doping Effects ◽  
Secondary Ion

ABSTRACTThis study has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of the EL devices. A series of SrS:Cu,Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of samples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.

scholarly journals Theoretical prediction by DFT and experimental observation of heterocation-doping effects on hydrogen adsorption and migration over the CeO2(111) surface

2021 ◽  
Author(s):  
Kota Murakami ◽  
Yuta Mizutani ◽  
Hiroshi Sampei ◽  
Atsushi Ishikawa ◽  
Yuta Tanaka ◽  
...  
Keyword(s):  
Theoretical Prediction ◽  
Experimental Observation ◽  
Ionic Radius ◽  
Hydrogen Adsorption ◽  
Strong Binding ◽  
Doping Effects ◽  
Small Ionic Radius ◽  
And Migration

The addition of dopants with a small ionic radius led to strong binding of H atoms, and the balance of H+ reactivity (mobility) and H+ coverage was fundamentally important for high H+ conductivity and catalysis involving surface protonics.

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