scholarly journals Anomalous Hall effect in semiconductor quantum wells in proximity to chiral p -wave superconductors

2018 ◽  
Vol 97 (20) ◽  
Author(s):  
F. Yang ◽  
T. Yu ◽  
M. W. Wu
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
P Wave ◽  
Semiconductor Quantum Wells

Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

2013 ◽  
Vol 102 (20) ◽  
pp. 202408 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
Y. Liu ◽  
C. Y. Jiang ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Spin-dependent Hall effect in semiconductor quantum wells

2004 ◽  
Vol 95 (4) ◽  
pp. 1918-1923 ◽  
Author(s):  
H. C. Huang ◽  
O. Voskoboynikov ◽  
C. P. Lee
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Semiconductor Quantum Wells

Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature

2012 ◽  
Vol 100 (14) ◽  
pp. 142109 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
C. Y. Jiang ◽  
Y. Liu ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Anomalous Hall Effect in 2D DMS

2015 ◽  
Vol 233-234 ◽  
pp. 109-112 ◽  
Author(s):  
Leonid N. Oveshnikov ◽  
V.A. Kulbachinskii ◽  
Alexander B. Davydov ◽  
Boris A. Aronzon
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Free Carrier ◽  
Temperature Decrease ◽  
Percolation Transition ◽  
Sign Change ◽  
Intrinsic Mechanism ◽  
Spin Dependent Scattering ◽  
Mn Doped

Transport and magnetic properties of δ-Mn doped GaAs/InGaAs/GaAs quantum wells (QW) with various In content were studied at temperatures 4.2K≤T≤300K. Fluctuation potential (FP) appeared to be crucial for transport characteristics of structures under investigation. The magnetic percolation transition was observed at temperatureTpin the range 20 - 40K. TheTpdependence on the In content is nonmonotonic due to the peculiarities of free-carrier mediated exchange interaction mechanisms. The change of the anomalous Hall effect (AHE) sign with decreasing temperature was detected at temperatures close to theTp. The main reason of the AHE sign change is the variation of contributions of different AHE mechanisms (intrinsic and side-jump) caused by the reduction of spin-dependent scattering intensity with temperature decrease. We believe that our results are the experimental observation of the AHE intrinsic mechanism in 2D.

scholarly journals Anomalous spin precession and spin Hall effect in semiconductor quantum wells

2013 ◽  
Vol 88 (3) ◽  
Author(s):  
Xintao Bi ◽  
Peiru He ◽  
E. M. Hankiewicz ◽  
R. Winkler ◽  
Giovanni Vignale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Precession ◽  
Semiconductor Quantum Wells

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

2006 ◽  
Vol 15 (12) ◽  
pp. 3019-3025 ◽  
Author(s):  
Song Hong-Zhou ◽  
Zhang Ping ◽  
Duan Su-Qing ◽  
Zhao Xian-Geng
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Semiconductor Quantum Wells
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