scholarly journals Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB-based magnetic tunnel junctions by variation of the MgAl2O4 and MgO barrier thickness

2017 ◽  
Vol 96 (21) ◽  
Author(s):  
Torsten Huebner ◽  
Ulrike Martens ◽  
Jakob Walowski ◽  
Alexander Boehnke ◽  
Jan Krieft ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Seebeck Effect ◽  
Barrier Thickness

Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Barrier Thickness ◽  
Tunneling Barrier

scholarly journals Seebeck effect in magnetic tunnel junctions

2011 ◽  
Vol 10 (10) ◽  
pp. 742-746 ◽  
Author(s):  
Marvin Walter ◽  
Jakob Walowski ◽  
Vladyslav Zbarsky ◽  
Markus Münzenberg ◽  
Markus Schäfers ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Seebeck Effect

scholarly journals Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

2013 ◽  
Vol 87 (9) ◽  
Author(s):  
Witold Skowroński ◽  
Maciej Czapkiewicz ◽  
Marek Frankowski ◽  
Jerzy Wrona ◽  
Tomasz Stobiecki ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer ◽  
Tunnel Barrier ◽  
Barrier Thickness

Magnetoresistance Variation of Magnetic Tunnel Junctions with NiFeSiB/CoFeB Free Layers Depending on MgO Tunnel Barrier Thickness

2008 ◽  
Vol 44 (11) ◽  
pp. 2547-2550 ◽  
Author(s):  
Ji Ung Cho ◽  
Do Kyun Kim ◽  
Tian Xing Wang ◽  
S. Isogami ◽  
M. Tsunoda ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barrier ◽  
Barrier Thickness

Effect of Annealing and Barrier Thickness on MgO-Based Co/Pt and Co/Pd Multilayered Perpendicular Magnetic Tunnel Junctions

2008 ◽  
Vol 44 (11) ◽  
pp. 3601-3604 ◽  
Author(s):  
Li-Xiu Ye ◽  
Ching-Ming Lee ◽  
Jhin-Wei Syu ◽  
Yi-Rung Wang ◽  
Kun-Wei Lin ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Barrier Thickness

scholarly journals Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015035 ◽  
Author(s):  
Keyu Ning ◽  
Houfang Liu ◽  
Zhenyi Ju ◽  
Chi Fang ◽  
Caihua Wan ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Seebeck Effect ◽  
Perpendicular Anisotropy

scholarly journals Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Alexander Boehnke ◽  
Ulrike Martens ◽  
Christian Sterwerf ◽  
Alessia Niesen ◽  
Torsten Huebner ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Seebeck Effect ◽  
Half Metallic

Magnetic tunnel junctions using LaSrMnO ferromagnetic electrodes and PbZrTiO3 piezoelectric barrier

2009 ◽  
Vol 24 (10) ◽  
pp. 3065-3072 ◽  
Author(s):  
A.K. Pradhan ◽  
R. Mundle ◽  
R.B. Konda ◽  
O. Yasar ◽  
F. Williams ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Behavior ◽  
Barrier Thickness ◽  
Barrier Potential ◽  
Ferromagnetic Electrodes ◽  
Barrier Region ◽  
Microscopic Studies ◽  
Ferromagnetic Hysteresis

We report on the fabrication and tunneling characteristics of pulsed-laser deposited LaSrMnO (LSMO)/PbZrTiO(PZT)/LSMO/SrTiO3 magnetic tunnel junctions. The trilayer films show magnetic onset at about 360 K with ferromagnetic hysteresis and uniaxial magnetic behavior at room temperature. The microscopic studies show that the effective barrier thickness is reduced due to the presence of defects in the barrier region. Tunneling magnetoresistance measurements were performed on several samples. Our results suggest that the asymmetric deformation of the barrier potential profile induced by the ferroelectric polarization of PZT influences the tunneling characteristics and can be used for electrically controlled readout in quantum computing schemes.

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