Structural transformations in (1−x)Na0.5Bi0.5TiO3−xBaTiO3 single crystals studied by Raman spectroscopy

2017 ◽  
Vol 96 (21) ◽  
Author(s):  
G. de la Flor ◽  
T. Malcherek ◽  
S. Gorfman ◽  
B. Mihailova
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Structural Transformations

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Phase transitions in PbZr0.72Sn0.28O3 single crystals studied by Raman spectroscopy

2016 ◽  
Vol 89 (7-8) ◽  
pp. 768-776 ◽  
Author(s):  
Irena Jankowska-Sumara ◽  
Min-Seok Jeong ◽  
Jae-Hyeon Ko ◽  
Andrzej Majchrowski ◽  
Józef Żmija
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transitions ◽  
Single Crystals

Cracking and Phase Transformation in Silicon During Nanoindentation

2003 ◽  
Vol 795 ◽  
Author(s):  
Jae-il Jang ◽  
Songqing Wen ◽  
M. J. Lance ◽  
I. M. Anderson ◽  
G. M. Pharr
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transformation ◽  
Single Crystals ◽  
Transformation Behavior ◽  
Amorphous Phases ◽  
Phase Transformation Behavior ◽  
Wide Range ◽  
Load Displacement ◽  
Indenter Geometry

ABSTRACTNanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.

Phonon Raman spectroscopy of superconducting Bi2Sr2CaCu2O8+δ single crystals

1990 ◽  
Vol 74 (10) ◽  
pp. 1107-1112 ◽  
Author(s):  
M. Boekholt ◽  
A. Erle ◽  
P.C. Splittgerber-Hünnekes ◽  
G. Güntherodt
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals

scholarly journals Synthesis and Structural Properties of Nanocomposites Based on Synthetic Opals and Active Dielectrics

2019 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Bilal Abu Sal
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Structural Properties ◽  
Raman Spectra ◽  
Phase Structure ◽  
Opal Matrix ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal State ◽  
Synthetic Opals

This work is devoted to generalize and analyze the previouse results of new photonic-crystalline nanomaterials based on synthetic opals and active dielectrics. Data were characterized by X-ray diffraction and Raman spectroscopy. Active dielectrics infiltrated into the pores of the opal from the melt. The phase structure composition of the infiltrated materials into the pores of the opal matrix were analyzed. The results of x-ray diffraction and Raman spectra allowed to establish the crystal state of active dielectrics in the pores of the opal. The Raman spectra of some opal-active dielectric nanocomposites revealed new bands and changes in band intensities compared to the spectra of single crystals of active dielectrics. Further more, differences in band intensities in the spectra were measured at different spots of the sample‘s surface were observed. The revealed changes were attributed to the formation of new crystalline phases due to the injected dielectrics in opal pores.

Refinement of the layered titanosilicate AM-1 from single-crystal X-ray diffraction data

2007 ◽  
Vol 63 (11) ◽  
pp. i186-i186 ◽  
Author(s):  
Stanislav Ferdov ◽  
Uwe Kolitsch ◽  
Christian Lengauer ◽  
Ekkehart Tillmanns ◽  
Zhi Lin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Hydrogen Bonding ◽  
Single Crystal ◽  
Single Crystals ◽  
Diffraction Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Time ◽  
Ir And Raman ◽  
Bonding Scheme

The structure of the layered noncentrosymmetric titanosilicate AM-1 (also known as JDF-L1, disodium titanium tetrasilicate dihydrate), Na4Ti2Si8O22·4H2O, grown as small single crystals without the use of organics, has been refined from single-crystal X-ray diffraction data. The H atom has been located for the first time, and the hydrogen-bonding scheme is also characterized by IR and Raman spectroscopy. All atoms are in general positions except for the Na, the Ti, one Ti-bound O, one Si-bound O and the water O atoms (site symmetries 2, 4, 4, 2 and 2, respectively).

New Developments in Raman Spectroscopy with Lasers: Electronic Transitions

1968 ◽  
Vol 22 (5) ◽  
pp. 438-444 ◽  
Author(s):  
J. A. Koningstein
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Crystal Field ◽  
Raman Spectra ◽  
Raman Effect ◽  
Electronic Transitions ◽  
New Developments ◽  
Selection Rules ◽  
Phonon Spectra ◽  
Host Lattices

A discussion is given of the Raman spectra of single crystals of yttrium gallium garnet (YGaG), of ytterbrium gallium garnet (YbGaG), and of Yb:YGaG. From a comparison of the spectra it has been possible to separate the phonon spectra of the host lattices from that of an electronic Raman effect which occurs between the crystal field levels of the 2F7/2 manifold of Yb3+ in the garnet crystals. Information with respect to the selection rules governing both types of spectra is given.

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