scholarly journals Localization length versus level repulsion in one-dimensional driven disordered quantum wires

2017 ◽  
Vol 96 (17) ◽  
Author(s):  
Enrique Benito-Matías ◽  
Rafael A. Molina
Keyword(s):  
Quantum Wires ◽  
Localization Length ◽  
One Dimensional ◽  
Versus Level

scholarly journals LOCALIZED ENTANGLEMENT IN ONE-DIMENSIONAL ANDERSON MODEL

2005 ◽  
Vol 19 (11) ◽  
pp. 517-527 ◽  
Author(s):  
HAIBIN LI ◽  
XIAOGUANG WANG
Keyword(s):  
Anderson Model ◽  
Localization Length ◽  
Direct Relation ◽  
Disorder Strength ◽  
One Dimensional ◽  
Entanglement Distribution ◽  
Localization Center

The entanglement in one-dimensional Anderson model is studied. The pairwise entanglement has a direct relation to the localization length and is reduced by disorder. Entanglement distribution displays the entanglement localization. The pairwise entanglements around localization center exhibit a maximum as the disorder strength increases. The dynamics of entanglement are also investigated.

Magnetization of GaAs quantum wires with quasi one-dimensional electron systems

2004 ◽  
Vol 22 (1-3) ◽  
pp. 729-732 ◽  
Author(s):  
M.A Wilde ◽  
J.I Springborn ◽  
Ch Heyn ◽  
D Heitmann ◽  
D Grundler
Keyword(s):  
Quantum Wires ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional

scholarly journals Quantum conductance staircase of holes in silicon nanosandwiches

2019 ◽  
Vol 20 (2) ◽  
pp. 81-98
Author(s):  
N. T. Bagraev ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
V. S. Khromov
Keyword(s):  
Kinetic Energy ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Energy Gap ◽  
Point Contact ◽  
Quantum Conductance ◽  
One Dimensional ◽  
Drastic Increase ◽  
Quantum Point ◽  
The One

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T > 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

Observation of photoinduced intersubband transitions in one-dimensional semiconductor quantum wires

2000 ◽  
Vol 62 (15) ◽  
pp. 9935-9938 ◽  
Author(s):  
S. Calderon ◽  
O. Kadar ◽  
A. Sa’ar ◽  
A. Rudra ◽  
E. Martinet ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Intersubband Transitions ◽  
One Dimensional

Ultrathin One-Dimensional Molybdenum Telluride Quantum Wires Synthesized by Chemical Vapor Deposition

2020 ◽  
Vol 32 (22) ◽  
pp. 9650-9655
Author(s):  
Youngdong Yoo ◽  
Jong Seok Jeong ◽  
Rui Ma ◽  
Steven J. Koester ◽  
James E. Johns
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Wires ◽  
Chemical Vapor ◽  
One Dimensional

scholarly journals The interplay between one-dimensional confinement and two-dimensional crystallographic anisotropy effects in ballistic hole quantum wires

2009 ◽  
Vol 11 (4) ◽  
pp. 043018 ◽  
Author(s):  
O Klochan ◽  
A P Micolich ◽  
L H Ho ◽  
A R Hamilton ◽  
K Muraki ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Two Dimensional ◽  
One Dimensional ◽  
Crystallographic Anisotropy

scholarly journals Magnetoresistance of one-dimensional subbands in tunnel-coupled double quantum wires

1999 ◽  
Vol 60 (16) ◽  
pp. 11530-11534 ◽  
Author(s):  
J. S. Moon ◽  
M. A. Blount ◽  
J. A. Simmons ◽  
J. R. Wendt ◽  
S. K. Lyo ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Double Quantum ◽  
One Dimensional
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