scholarly journals Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates

2017 ◽  
Vol 96 (5) ◽  
Author(s):  
Yan Wang ◽  
Louk Rademaker ◽  
Elbio Dagotto ◽  
Steven Johnston
2013 ◽  
Vol 63 (1) ◽  
pp. 73-79
Author(s):  
Do Hyung KIM ◽  
Soo Chang CHOI ◽  
Eun Jeong YOON ◽  
Chang Young PARK ◽  
Jong Duk LEE ◽  
...  

2020 ◽  
Vol 534 ◽  
pp. 147638
Author(s):  
María Vila ◽  
Juan Rubio-Zuazo ◽  
Irene Lucas ◽  
César Magén ◽  
Alicia Prados ◽  
...  

2006 ◽  
Vol 80 (1) ◽  
pp. 97-106 ◽  
Author(s):  
MATS BLOMQVIST ◽  
SERGEY KHARTSEV ◽  
ALEX GRISHIN

2008 ◽  
Vol 77 (7) ◽  
Author(s):  
I. Preda ◽  
A. Gutiérrez ◽  
M. Abbate ◽  
F. Yubero ◽  
J. Méndez ◽  
...  

2008 ◽  
Vol 41 (12) ◽  
pp. 125407 ◽  
Author(s):  
I Pallecchi ◽  
E Bellingeri ◽  
C Bernini ◽  
L Pellegrino ◽  
A S Siri ◽  
...  

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Chien H. Peng

AbstractTransparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.


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