scholarly journals Coupling and braiding Majorana bound states in networks defined in two-dimensional electron gases with proximity-induced superconductivity

2017 ◽  
Vol 96 (3) ◽  
Author(s):  
Michael Hell ◽  
Karsten Flensberg ◽  
Martin Leijnse
Keyword(s):  
Bound States ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Majorana Bound States

scholarly journals Proximity effect in a two-dimensional electron gas coupled to a thin superconducting layer

2018 ◽  
Vol 9 ◽  
pp. 1263-1271 ◽  
Author(s):  
Christopher Reeg ◽  
Daniel Loss ◽  
Jelena Klinovaja
Keyword(s):  
Bound States ◽  
Topological Phase ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Band Shift ◽  
Superconducting Layer ◽  
Strongly Coupled ◽  
Semiconducting Material ◽  
Dimensional Electron Gas

There have recently been several experiments studying induced superconductivity in semiconducting two-dimensional electron gases that are strongly coupled to thin superconducting layers, as well as probing possible topological phases supporting Majorana bound states in such setups. We show that a large band shift is induced in the semiconductor by the superconductor in this geometry, thus making it challenging to realize a topological phase. Additionally, we show that while increasing the thickness of the superconducting layer reduces the magnitude of the band shift, it also leads to a more significant renormalization of the semiconducting material parameters and does not reduce the challenge of tuning into a topological phase.

Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska
Keyword(s):  
Electronic Structure ◽  
Indium Arsenide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Temperature studies of the tunnelling between parallel two-dimensional electron gases

1996 ◽  
Vol 40 (1-8) ◽  
pp. 413-415 ◽  
Author(s):  
N Turner ◽  
J.T Nicholls ◽  
E.H Linfield ◽  
K.M Brown ◽  
M Pepper ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Ting-Ting Wang ◽  
Sining Dong ◽  
Zhi-Li Xiao ◽  
Chong Li ◽  
Wen-Cheng Yue ◽  
...  
Keyword(s):  
Interface Roughness ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

scholarly journals Relevance of weak and strong classical scattering for the giant negative magnetoresistance in two-dimensional electron gases

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
B. Horn-Cosfeld ◽  
J. Schluck ◽  
J. Lammert ◽  
M. Cerchez ◽  
T. Heinzel ◽  
...  
Keyword(s):  
Negative Magnetoresistance ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped AlxGa1−xN/GaN Heterostructures

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa
Keyword(s):  
Radiative Recombination ◽  
Electron Gas ◽  
Excitation Intensity ◽  
Energy Separation ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Peak Energy ◽  
Dimensional Electron Gas ◽  
Increasing Temperature

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.

Sign in / Sign up

Export Citation Format

Share Document