scholarly journals Disentangling the role of small polarons and oxygen vacancies in CeO2

2017 ◽  
Vol 95 (24) ◽  
Author(s):  
Lu Sun ◽  
Xiaowei Huang ◽  
Ligen Wang ◽  
Anderson Janotti
Keyword(s):  
Oxygen Vacancies ◽  
Small Polarons

Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies

2021 ◽  
Vol 112 ◽  
pp. 110808
Author(s):  
Jiang Wang ◽  
Yuanqiang Xiong ◽  
Lijuan Ye ◽  
Wanjun Li ◽  
Guoping Qin ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Solar Blind

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2

Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-δ

2017 ◽  
Vol 110 (24) ◽  
pp. 243502 ◽  
Author(s):  
Thilo Kramer ◽  
Malte Scherff ◽  
Daniel Mierwaldt ◽  
Joerg Hoffmann ◽  
Christian Jooss
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Oxygen Vacancies

scholarly journals The role of oxygen vacancies on resistive switching properties of oxide materials

2020 ◽  
Vol 7 (5) ◽  
pp. 665-683
Author(s):  
Hang Meng ◽  
◽  
Shihao Huang ◽  
Yifeng Jiang
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Oxide Materials

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

Sign in / Sign up

Export Citation Format

Share Document