Attenuation process of the longitudinal phonon mode in a TeO2 crystal in the 20-GHz range

2017 ◽  
Vol 95 (22) ◽  
Author(s):  
S. Ohno ◽  
T. Sonehara ◽  
E. Tatsu ◽  
A. Koreeda ◽  
S. Saikan
Keyword(s):  
Phonon Mode ◽  
Longitudinal Phonon

QUANTUM CONFINEMENT OF EMBEDDED COPPER CLUSTER SANDWICHED BY LITHIUM FLUORIDE

1996 ◽  
Vol 03 (01) ◽  
pp. 1143-1146 ◽  
Author(s):  
G.H. WANG ◽  
H.Q. ZHANG ◽  
J.X. MA ◽  
M. HAN ◽  
Q. WANG ◽  
...  
Keyword(s):  
Lithium Fluoride ◽  
Quantum Confinement ◽  
Phonon Mode ◽  
Metal Clusters ◽  
Vibrational Modes ◽  
Laser Raman ◽  
Copper Clusters ◽  
Longitudinal Phonon ◽  
Surface Phonon Mode ◽  
Fcc Structure

Optical absorption and laser Raman scattering spectroscopies as well as EXAFS are used to investigate the copper clusters embedded in the lithium fluoride, and the results indicate that (i) the metal clusters of about 2 nm in diameter have the bulk-like fcc structure with a contracted interatomic distance and lower mean coordination number, (ii) the embedded metal clusters show a surface-plasmon resonance, (iii) for clusters smaller than certain size the surface-phonon mode becomes important, and the high-order longitudinal phonon vibrational modes emerge.

scholarly journals Tight-binding investigation of the structural and vibrational properties of graphene–single wall carbon nanotube junctions

2021 ◽  
Author(s):  
Juhi Srivastava ◽  
Anshu Gaur
Keyword(s):  
Charge Transfer ◽  
Carbon Nanotube ◽  
Phonon Mode ◽  
Tight Binding ◽  
Hybrid Nanostructures ◽  
Structural Deformation ◽  
Vibrational Properties ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Carbon Nanotube Junctions

The phonon mode frequencies of SWNT and SLG in hybrid nanostructures are sensitive to various interactions, such as vdW forces, structural deformation and/or charge transfer between SWNT and SLG.

Spatial Correlation Interpretation of Effects of As+ Implantation on the Raman Spectra of GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
D.E. Aspnes ◽  
K.K. Tiong ◽  
P.M. Amirtharaj ◽  
F.H. Pollak
Keyword(s):  
Spatial Correlation ◽  
Raman Spectra ◽  
Selection Rule ◽  
Phonon Mode ◽  
Red Shift ◽  
Correlation Model ◽  
Model Based ◽  
Ion Implanted

ABSTRACTThe red shift and asymmetric broadening of the LO phonon mode of ion-implanted GaAs are both described quantitatively by a spatial correlation model based on a damage-induced relaxation of the momentum selection rule previously used by Richter, Wang, and Ley to describe similar effects in microcrystalline Si. The success of the model for a qualitatively different disorder microstructure suggests it may be possible to evaluate average sizes of crystallographically perfect regions in semiconductors from the phonon lineshapes of their Raman spectra.

Review of Phonon Behavior and Microstructural Development Leading to Martensitic Transformations in NixAl(100-x) Alloys

1991 ◽  
Vol 246 ◽  
Author(s):  
L. E. Tanner ◽  
S. M. Shapiro ◽  
D. Schryvers ◽  
Y. Noda
Keyword(s):  
Phonon Mode ◽  
Inelastic Neutron Scattering ◽  
Dynamical Behavior ◽  
Martensitic Transformations ◽  
High Resolution Electron Microscopy ◽  
Inelastic Neutron ◽  
Microstructural Development ◽  
Martensitic Transformation Temperature ◽  
Resolution Electron ◽  
Structural Configurations

AbstractElastic and inelastic neutron-scattering and high-resolution electron-microscopy examinations of the β2 (B2) phase of NixAl(100-x) alloys show a direct relationship between the anomalous changes in lattice dynamical behavior and the evolution of static premartensitic structural configurations as the β2 cools toward its martensitic transformation temperature, Ms. The resulting microstructure is a fine-scale mosaic assembly of nonuniformly distorted and modulated domains, in which {110}<110> shear-plus-shuffle displacements give rise to the {110}B2 micromodulations of ∼1.3 nm wavelength. These displacements are derived from the unusually low energy of the Σ4<ζζ0>–TA2 phonon mode and its anomalous temperaturedependent incomplete softening at ζ = 0 (viz., the elastic constant C) and at ζ ≈ 0.16. These inhomogeneously strained domains (ISDs) are believed to be centered on low strain-amplitude defects. They are viewed as strain embryos of the product 7M(5, 2) martensite but are generally too weak to act as potent nucleation centers. Similar ISD configurations develop at defects with higher strain amplitudes (e.g., dislocations, grain boundaries) and these are the most likely sites for heterogeneous nucleation to occur.

Low frequency Raman spectra of the liquid and plastic crystal phases of O2, N2, CO, and of Ar crystals with these molecules as guests

1982 ◽  
Vol 60 (9) ◽  
pp. 1358-1364 ◽  
Author(s):  
N. H. Rich ◽  
M. J. Clouter ◽  
H. Kiefte ◽  
S. F. Ahmad
Keyword(s):  
Single Crystals ◽  
Raman Spectra ◽  
Phonon Mode ◽  
Low Frequency ◽  
Impurity Molecule ◽  
Spectral Features ◽  
Background Impurity ◽  
Crystal Phases ◽  
Distinct Features ◽  
Frequency Feature

Low frequency Raman spectra of single crystals of orientationally disordered phases of oxygen, nitrogen, and carbon monoxide, and spectra of those substances as liquids show two linear segments in semi-log plots. Slopes of the higher frequency segments are nearly equal for all cases; slopes of the lower frequency segments are particular to the substance and are nearly the same in both liquid and crystal for O2 and CO. Spectra of single crystals of argon doped with O2, N2, or CO show two distinct features superimposed on a sloping background. Impurity molecule reorientation apparently accounts satisfactorily for all spectral features, but translation–rotation coupling may allow a contribution to the higher frequency feature arising from a local phonon mode in argon.

Pressure Effect on the Einstein-Like Phonon Mode in Superconducting $$\hbox {YB}_{6}$$ YB 6

2016 ◽  
Vol 187 (5-6) ◽  
pp. 553-558 ◽  
Author(s):  
Mat. Orendáč ◽  
S. Gabáni ◽  
E. Gažo ◽  
G. Pristáš ◽  
K. Flachbart ◽  
...  
Keyword(s):  
Phonon Mode ◽  
Pressure Effect

scholarly journals Unification of the phonon mode behavior in semiconductor alloys: Theory andab initiocalculations

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
O. Pagès ◽  
A. V. Postnikov ◽  
M. Kassem ◽  
A. Chafi ◽  
A. Nassour ◽  
...  
Keyword(s):  
Phonon Mode ◽  
Semiconductor Alloys ◽  
Mode Behavior

Phonon mode behaviours of PbTiO3thin films deposited on Pt/Si substrates

1999 ◽  
Vol 12 (4) ◽  
pp. 399-414 ◽  
Author(s):  
D S Fu ◽  
H Iwazaki ◽  
H Suzuki ◽  
K Ishikawa
Keyword(s):  
Phonon Mode ◽  
Si Substrates
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