Inverse spin Hall effect in the semiconductor (Ga,Mn)As at room temperature

2017 ◽  
Vol 95 (21) ◽  
Author(s):  
J. B. S. Mendes ◽  
S. L. A. Mello ◽  
O. Alves Santos ◽  
R. O. Cunha ◽  
R. L. Rodríguez-Suárez ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Spin Hall Effect ◽  
Inverse Spin Hall Effect

scholarly journals Self-induced inverse spin Hall effect in permalloy at room temperature

2014 ◽  
Vol 89 (23) ◽  
Author(s):  
Ayaka Tsukahara ◽  
Yuichiro Ando ◽  
Yuta Kitamura ◽  
Hiroyuki Emoto ◽  
Eiji Shikoh ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Spin Hall Effect ◽  
Inverse Spin Hall Effect

Spin to charge current conversion by the inverse spin Hall effect in the metallic antiferromagnet Mn2Au at room temperature

2018 ◽  
Vol 98 (14) ◽  
Author(s):  
M. Arana ◽  
M. Gamino ◽  
E. F. Silva ◽  
V. M. T. S. Barthem ◽  
D. Givord ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Spin Hall Effect ◽  
Charge Current ◽  
Inverse Spin Hall Effect

scholarly journals Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature

2013 ◽  
Vol 102 (15) ◽  
pp. 152411 ◽  
Author(s):  
F. Bottegoni ◽  
A. Ferrari ◽  
S. Cecchi ◽  
M. Finazzi ◽  
F. Ciccacci ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Spin Hall Effect ◽  
Inverse Spin Hall Effect

Electrically tunable inverse spin Hall effect in SrIrO3/Pb(Mg1/3Nb2/3)0.7 Ti0.3O3 heterostructures through interface strain coupling

2021 ◽  
Vol 118 (5) ◽  
pp. 052904
Author(s):  
Dapeng Cui ◽  
Yeming Xu ◽  
Lifan Zhou ◽  
Lunyong Zhang ◽  
Zhongzhi Luan ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Interface Strain ◽  
Inverse Spin Hall Effect ◽  
Strain Coupling

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

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