scholarly journals Phonon thermal transport in transition-metal and rare-earth nitride semiconductors from first principles

2017 ◽  
Vol 95 (20) ◽  
Author(s):  
Chunhua Li ◽  
David Broido
2011 ◽  
Vol 1290 ◽  
Author(s):  
H. Asahi ◽  
S. Hasegawa ◽  
Y.K. Zhou ◽  
S. Emura

ABSTRACTTransition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.


2008 ◽  
Author(s):  
R. H. Pink ◽  
S. R. Badu ◽  
A. Dubey ◽  
R. H. Scheicher ◽  
J. Jeong ◽  
...  

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