scholarly journals Band-unfolding approach to moiré-induced band-gap opening and Fermi level velocity reduction in twisted bilayer graphene

2017 ◽  
Vol 95 (8) ◽  
Author(s):  
Hirofumi Nishi ◽  
Yu-ichiro Matsushita ◽  
Atsushi Oshiyama
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Bilayer Graphene ◽  
Velocity Reduction ◽  
Gap Opening ◽  
Twisted Bilayer Graphene

Graphene-Based Sensors for Monitoring Strain

2013 ◽  
Vol 3 (1) ◽  
pp. 74-83
Author(s):  
M. Mirnezhad ◽  
R. Ansari ◽  
H. Rouhi ◽  
M. Faghihnasiri
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Strain Distribution ◽  
Density Functional ◽  
Tight Binding ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Gap Opening

The application of graphene as a nanosensor in measuring strain through its band structure around the Fermi level is investigated in this paper. The mechanical properties of graphene as well as its electronic structure are determined by using the density functional theory calculations within the framework of generalized gradient approximation. In the case of electronic properties, the simulations are applied for symmetrical and asymmetrical strain distributions in elastic range; also the tight-binding approach is implemented to verify the results. It is indicated that the energy band gap does not change with the symmetrical strain distribution but depend on the asymmetric strain distribution, increasing strain leads to band gap opening around the Fermi level.

scholarly journals Step-Lattice-Induced Band-Gap Opening at the Fermi Level

2004 ◽  
Vol 92 (1) ◽  
Author(s):  
F. Baumberger ◽  
M. Hengsberger ◽  
M. Muntwiler ◽  
M. Shi ◽  
J. Krempasky ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Gap Opening

scholarly journals Band gap opening of bilayer graphene by graphene oxide support doping

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9862-9871 ◽  
Author(s):  
Shaobin Tang ◽  
Weihua Wu ◽  
Xiaojun Xie ◽  
Xiaokang Li ◽  
Junjing Gu
Keyword(s):  
Graphene Oxide ◽  
Band Gap ◽  
Bilayer Graphene ◽  
Monolayer Graphene ◽  
Graphene Oxides ◽  
Oxide Support ◽  
Gap Opening

In contrast to the metallic monolayer graphene by graphene oxides (GOs) doping, the sizable band gap of bilayer graphene is opened by GOs.

Effects of band gap opening on an n–p–n bilayer graphene junction

2011 ◽  
Vol 43 (5) ◽  
pp. 1061-1064 ◽  
Author(s):  
Chaipattana Saisa-ard ◽  
I. Ming Tang ◽  
Rassmidara Hoonsawat
Keyword(s):  
Band Gap ◽  
Bilayer Graphene ◽  
Gap Opening

scholarly journals Molecular Doping and Band-Gap Opening of Bilayer Graphene

ACS Nano ◽  
2013 ◽  
Vol 7 (3) ◽  
pp. 2790-2799 ◽  
Author(s):  
Alexander J. Samuels ◽  
J. David Carey
Keyword(s):  
Band Gap ◽  
Bilayer Graphene ◽  
Gap Opening ◽  
Molecular Doping

Electronic transport and shot noise in a Thue–Morse bilayer graphene superlattice with interlayer potential bias

2016 ◽  
Vol 30 (16) ◽  
pp. 1650181 ◽  
Author(s):  
Yuanqiao Li ◽  
Hongmei Zhang ◽  
De Liu
Keyword(s):  
Band Gap ◽  
Transmission Coefficient ◽  
Energy Band ◽  
Normal Incidence ◽  
Fano Factor ◽  
Bilayer Graphene ◽  
Potential Bias ◽  
Energy Band Gap ◽  
Gap Opening ◽  
Graphene Superlattice

In this paper, we evaluate the transport properties of a Thue–Morse AB-stacked bilayer graphene superlattice with different interlayer potential biases. Based on the transfer matrix method, the transmission coefficient, the conductance, and the Fano factor are numerically calculated and discussed. We find that the symmetry of the transmission coefficient with respect to normal incidence depends on the structural symmetry of the system and the new transmission peak appears in the energy band gap opening region. The conductance and the Fano factor can be greatly modulated not only by the Fermi energy and the interlayer potential bias but also by the generation number. Interestingly, the conductance exhibits the plateau of almost zero conductance and the Fano factor plateaus with Poisson value occur in the energy band gap opening region for large interlayer potential bias.

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