scholarly journals Pitfalls in the theory of carrier dynamics in semiconductor quantum dots: Single-particle basis versus the many-particle configuration basis

2017 ◽  
Vol 95 (8) ◽  
Author(s):  
T. Lettau ◽  
H. A. M. Leymann ◽  
J. Wiersig
Keyword(s):  
Quantum Dots ◽  
Single Particle ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
The Many ◽  
Particle Configuration ◽  
Single Particle Basis

Few-Particle Effects in Nonlinear Optical Spectra of Semiconductor Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ulrich Hohenesteri ◽  
Fausto Rossi ◽  
Elisa Molinari
Keyword(s):  
Quantum Dots ◽  
Density Matrix ◽  
Nonlinear Optical ◽  
Coherent Control ◽  
Optical Spectra ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Nonequilibrium Carrier ◽  
Optical Nonlinearities ◽  
Matrix Approach

ABSTRACTWe present a density-matrix approach for the description of nonequilibrium carrier dynamics in optically excited semiconductor quantum dots, that explicitly accounts for exciton-exciton as well as exciton-carrier interactions. Within this framework, we analyze few-particle effects in the optical spectra and provide a consistent description of additional peaks appearing at high photoexcitation density. We discuss possible applications of such optical nonlinearities in future coherent-control experiments.

ENERGY STATES IN QUANTUM DOTS

2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON
Keyword(s):  
Quantum Dots ◽  
Absorption Spectrum ◽  
Electronic Structure ◽  
Optical Absorption ◽  
Configuration Interaction ◽  
Single Particle ◽  
Optical Absorption Spectrum ◽  
Semiconductor Quantum Dots ◽  
Binding Energies ◽  
Particle Level

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.

Ultrafast carrier dynamics in semiconductor quantum dots

1996 ◽  
Vol 53 (3) ◽  
pp. 1463-1467 ◽  
Author(s):  
V. Klimov ◽  
P. Haring Bolivar ◽  
H. Kurz
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

scholarly journals Charge-tunnelling and self-trapping: common origins for blinking, grey-state emission and photoluminescence enhancement in semiconductor quantum dots

Nanoscale ◽  
2016 ◽  
Vol 8 (17) ◽  
pp. 9272-9283 ◽  
Author(s):  
M. A. Osborne ◽  
A. A. E. Fisher
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Self Trapping ◽  
Photoluminescence Enhancement ◽  
A Charge

Modelling quantum dot blinking, grey-states and photoluminescence enhancement within a charge-tunnelling and self-trapping description of exciton-carrier dynamics.

scholarly journals Photophysics and electroluminescence of single nanocrystals of halide perovskites and related nanomaterials

2018 ◽  
Vol 190 ◽  
pp. 02012
Author(s):  
Martin Vacha ◽  
Dharmendar Kumar Sharma
Keyword(s):  
Quantum Dots ◽  
Single Particle ◽  
Semiconductor Quantum Dots ◽  
Halide Perovskites ◽  
Halide Perovskite

We report simultaneous photoluminescence and electroluminescence single-particle study of nanocrystals of inorganic halide perovskite CsPbBr3, as well as of ternary I-III-IV semiconductor quantum dots.

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