scholarly journals Coherent transport properties of a three-terminal hybrid superconducting interferometer

2017 ◽  
Vol 95 (5) ◽  
Author(s):  
F. Vischi ◽  
M. Carrega ◽  
E. Strambini ◽  
S. D'Ambrosio ◽  
F. S. Bergeret ◽  
...  
Keyword(s):  
Transport Properties ◽  
Coherent Transport

The Coherent Transport Properties of Electrons in a 4-Terminal Nano Device with Rashba Spin-Orbit Coupling in the Presence of Magnetic Field

2012 ◽  
Vol 496 ◽  
pp. 175-180
Author(s):  
Hui Xian Wang ◽  
Li Ben Li ◽  
Da Wei Kang ◽  
Hui Hui Liu
Keyword(s):  
Magnetic Flux ◽  
Transport Properties ◽  
Coupling Strength ◽  
Quantum Wires ◽  
Channel Structure ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Coherent Transport ◽  
Rashba Spin ◽  
Magnetic Filed

We investigate the coherent transport properties of electrons in a side terminal of a four-terminal nano device made of quantum wires with Rashba spin-orbit (SO) coupling in the presence of magnetic filed. We numerically calculate the charge and spin conductances dependent on SO coupling strength and reduced flux. The results imply that the coherent transport in this device is determined by the interplay of Rashba SO coupling and magnetic filed. For specific values of magnetic flux and SO coupling strength, a complete blocking can take place. It also shows that there is a de-blocking phenomenon induced by the interplay of magnetic flux and SO coupling. Such a 4-terminal and multi-channel structure may provide more options of controlling methods for the coherent charge and spin transport.

Coherent transport through spin-crossover magnet Fe2complexes

Nanoscale ◽  
2016 ◽  
Vol 8 (1) ◽  
pp. 609-616 ◽  
Author(s):  
Jing Huang ◽  
Rong Xie ◽  
Weiyi Wang ◽  
Qunxiang Li ◽  
Jinlong Yang
Keyword(s):  
Transport Properties ◽  
Spin Crossover ◽  
Coherent Transport ◽  
Spin Transitions

SCO magnet Fe2complexes are verified to display two-step spin transitions and their transport properties are explored.

Manipulating the quantum interference effect and magnetotransport of ZnO nanowires through interfacial doping

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17610-17616 ◽  
Author(s):  
Siwen Zhao ◽  
Yiming Wu ◽  
Kaixuan Zhang ◽  
Huaiyi Ding ◽  
Dongxue Du ◽  
...  
Keyword(s):  
Transport Properties ◽  
Interference Effect ◽  
Quantum Interference ◽  
Zno Nanowires ◽  
Interference Effects ◽  
Coherent Transport ◽  
Quantum Interference Effect

Our work demonstrates that the interfacial Δ-doping method can manipulate the quantum-interference effects and enhance the phase coherent transport properties of a nano-device.

Calculation of the coherent transport properties of a symmetric spin nanocontact

2009 ◽  
Vol 517 (24) ◽  
pp. 6857-6861 ◽  
Author(s):  
B. Bourahla ◽  
A. Khater ◽  
R. Tigrine
Keyword(s):  
Transport Properties ◽  
Coherent Transport

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Transport properties of Ni81.5B18.5 - YP y amorphous alloys

1989 ◽  
Vol 50 (21) ◽  
pp. 3233-3242 ◽  
Author(s):  
M. Očko ◽  
E. Babić
Keyword(s):  
Transport Properties ◽  
Amorphous Alloys
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